IR2213PBF Infineon

IR2213(S)PBF High and Low Side Driver Features Product Summary Floating channel designed for bootstrap operation V (max) 1200 V OFFSET Fully operational to +1200 V Tolerant to negative transient voltage 1.7 A / 2 A I O+/- dV/dt immune Gate drive supply range from 12 V to 20 V V 12 V 20 V OUT Undervoltage lockout for both channels t (typical) 280 ns / 225 ns on/off 3.3 V logic compatible Separate logic supply range from 3.3 V to 20 V Delay Matching 30 ns Logic and power ground 5 V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Description Package Options The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used 16 Lead SOIC 14 Lead PDIP to drive an N-channel power MOSFET or IGBT in the high (Wide Body) side configuration which operates up to 1200 V. Ordering Information Standard Pack Base Part Number Orderable Part Number Package Type Form Quantity IR2213SPBF SO16WB Tube 45 IR2213SPBF IR2213SPBF SO16WB Tape and Reel 1000 IR2213STRPBF IR2213PBF PDIP14 Tube 25 IR2213PBF 1 www.irf.com 2016 International Rectifier April 26, 2016 IR2213(S)PBF Typical Connection Diagram Refer to Lead Assignments for correct pin configuration. This/These diagram(s) show electrical connections only. Please refer to our Application Notes and Design Tips for proper circuit board layout 2 www.irf.com 2016 International Rectifier April 26, 2016