IR2520D Data Sheet No. PD60212 revC IR2520D(S) & (PbF) ADAPTIVE BALLAST CONTROL IC Features Packages 600V Half Bridge Driver Integrated Bootstrap FET Adaptive zero-voltage switching (ZVS) Internal Crest Factor Over-Current Protection 0 to 6VDC Voltage Controlled Oscillator Programmable minimum frequency Micropower Startup Current (80uA) 8 Lead SOIC 8-Lead PDIP Internal 15.6V zener clamp on Vcc IR2520D IR2520DS Small DIP8/SO8 Package Also available LEAD-FREE (PbF) Description The IR2520D(S) is a complete adaptive ballast controller and 600V half-bridge driver integrated into a single IC for fluorescent lighting applications. The IC includes adaptive zero-voltage switching (ZVS), internal crest factor over-current protection, as well as an integrated bootstrap FET. The heart of this IC is a voltage con- trolled oscillator with externally programmable minimum frequency. All of the necessary ballast features are integrated in a small 8-pin DIP or SOIC package. Typical Application Diagram RSUPPLY DCP2 SPIRAL CFL BR1 MHS VCC VB LF 1 8 F1 LRES CVCC L1 COM HO 2 CBUS 7 CDC CSNUB CF CBS FMIN VS 3 6 RFMIN CRES VCO LO L2 4 5 CVCO MLS DCP1 www.irf.com 1IR2520D(S)& (PbF) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V High side floating supply voltage -0.3 625 B V High side floating supply offset voltage V - 25 V + 0.3 S B B V V High side floating output voltage V - 0.3 V + 0.3 HO S B V Low side output voltage -0.3 V + 0.3 LO CC I Voltage controlled oscillator input current (Note 1) -5 + 5 mA VCO I Supply current (Note 2) -25 25 mA CC dV /dt Allowable offset voltage slew rate -50 50 V/ns S P Package power dissipation T +25C 8-Lead PDIP 1 D A W PD=(T -T )Rth 8-Lead SOIC 0.625 JMAX A JA Rth Thermal resistance, junction to ambient 8-Lead PDIP 125 JA C/W 8-Lead SOIC 200 T Junction temperature -55 150 J C T Storage temperature -55 150 S T Lead temperature (soldering, 10 seconds) 300 L Note 1: This IC contains a zener clamp structure between the chip VCO and COM, which has a nominal breakdown voltage of 6V. Please note that this pin should not be driven by a DC, low impedance power source greater than 6V. Note 2: This IC contains a zener clamp structure between the chip VCC and COM, which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol Definition Min. Max. Units V High side floating supply voltage V - 0.7 V BS CC CLAMP V V Steady state high side floating supply offset voltage -1 600 S V Supply voltage V V CC CCUV+ CLAMP I Supply current Note 3 10 mA CC R Minimum frequency setting resistance 20 140 k FMIN V VCO pin voltage 0 5 V VCO T Junction temperature -25 125 C J Note 3: Enough current should be supplied into the VCC pin to keep the internal 15.6V zener clamp diode on this pin regulating its voltage, VCLAMP. 2 www.irf.com