IR25603PBF Infineon

Preliminary IR25603(S)PBF Self-Oscillating Half-Bridge Driver Features Product Summary Floating channel designed for bootstrap operation 600 V max. V OFFSET Integrated 600 V half-bridge gate driver 15.6 V zener clamp on Vcc Duty Cycle 50% True micropower start up Tighter initial dead time control 80 ns / 40 ns T / T r f Low temperature coefficient dead time V 15.6 V Shutdown feature (1/6th Vcc) on CT pin CLAMP Increased undervoltage lockout Hysteresis (1 V) 1.2 s Dead time (typ.) Lower power level-shifting circuit Constant LO, HO pulse widths at startup Io+/Io- (typ.) 180 mA / 260 mA Lower di/dt gate driver for better noise immunity Low side output in phase with RT Excellent latch immunity on all inputs and outputs ESD protection on all leads Package Options Description The IR25603(S) incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on Vcc has been reached, resulting in a more stable profile of frequency 8 Lead SOIC 8 Lead PDIP vs time at startup. Special attention has been paid to maximizing the latch immunity of the device and providing comprehensive ESD protection on all pins. Ordering Information Standard Pack Package Type Base Part Number Orderable Part Number Form Quantity IR25603SPBF SO8N Tube 95 IR25603SPBF IR25603SPBF SO8N Tape and Reel 2500 IR25603STRPBF IR25603PBF PDIP8 Tube 50 IR25603PBF 1 www.irf.com 2014 International Rectifier January 17, 2014 IR25603(S)PBF Typical Connection Diagram 2 www.irf.com 2014 International Rectifier January 17, 2014