IR25606STRPBF Infineon

IR25606SPBF Half-Bridge Driver Features Product Summary Floating channel designed for bootstrap operation Fully operational to +600V 600V max. V OFFSET Tolerant to negative transient voltage dV/dt immune 200 mA / 350 mA I O+/- Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 10 20V V OUT 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Ton/off (typ.) 220 & 200 ns Matched propagation delay for both channels Outputs in phase with inputs Dead time (typ.) 540 ns Logic and power ground +/-5V offset Internal 540ns dead-time Lower di/dt gate driver for better noise immunity Description Package Options The IR25606 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in 8 Lead SOIC the high side configuration which operates up to 600 V. Ordering Information Standard Pack Base Part Number Orderable Part Number Package Type Form Quantity IR25606SPBF SO8N Tube 95 IR25606SPBF IR25606SPBF SO8N Tape and Reel 2500 IR25606STRPBF 1 www.irf.com 2013 International Rectifier May 1, 2013 IR25606SPBF Typical Connection Diagram 2 www.irf.com 2013 International Rectifier May 1, 2013