IRF6620PbF IRF6620TRPbF DirectFET Power MOSFET RoHS Compliant V R max Qg(typ.) Lead-Free (Qualified up to 260C Reflow) DSS DS(on) Application Specific MOSFETs 20V 2.7m V = 10V 28nC GS Ideal for CPU Core DC-DC Converters 3.6m V = 4.5V GS Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description TM The IRF6620PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particu- larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 20 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 150 I T = 25C C GS D Continuous Drain Current, V 10V 27 A I T = 25C D A GS I T = 70C Continuous Drain Current, V 10V 22 GS D A 220 I Pulsed Drain Current DM 89 P T = 25C Power Dissipation C D P T = 70C Power Dissipation 1.8 W D A P T = 25C Power Dissipation 2.8 D A E 39 Single Pulse Avalanche Energy mJ AS I Avalanche Current 22 A AR Linear Derating Factor 0.017 W/C -40 to + 150 T Operating Junction and C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient 45 JA R Junction-to-Ambient 12.5 JA R Junction-to-Ambient 20 C/W JA R Junction-to-Case 1.4 JC R J-PCB Junction-to-PCB Mounted 1.0 Notes through are on page 2 www.irf.com 1 5/11/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 16 mV/C Reference to 25C, I = 1mA DSS J D R m Static Drain-to-Source On-Resistance 2.1 2.7 V = 10V, I = 27A DS(on) GS D 2.8 3.6 V = 4.5V, I = 22A GS D V Gate Threshold Voltage 1.55 2.45 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 110 S V = 10V, I = 22A DS D Q Total Gate Charge 28 42 g Q Pre-Vth Gate-to-Source Charge 9.5 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 3.5 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 8.8 I = 22A gd D Q Gate Charge Overdrive 6.2 See Fig. 15 godr Q Switch Charge (Q + Q ) 12 sw gs2 gd Q Output Charge 16 nC V = 10V, V = 0V oss DS GS t Turn-On Delay Time 18 V = 16V, V = 4.5V d(on) DD GS t Rise Time 80 I = 22A r D t Turn-Off Delay Time 20 ns Clamped Inductive Load d(off) t Fall Time 6.6 f C Input Capacitance 4130 V = 0V iss GS C Output Capacitance 1160 pF V = 10V oss DS C Reverse Transfer Capacitance 560 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current T =25C 110 MOSFET symbol D S C (Body Diode) A showing the G I Pulsed Source Current 220 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 1.0 V T = 25C, I = 22A, V = 0V SD J S GS t Reverse Recovery Time 23 35 ns T = 25C, I = 22A rr J F Q di/dt = 100A/s Reverse Recovery Charge 13 20 nC rr Click on this section to link to the appropriate technical paper. Surface mounted on 1 in. square Cu board. Click on this section to link to the DirectFET Website. Used double sided cooling, mounting pad. Repetitive rating pulse width limited by max. junction Mounted on minimum footprint full size board with temperature. metalized back and with small clip heatsink. Starting T = 25C, L = 0.16mH, R = 25, I = 22A. T measured with thermal couple mounted to top J G AS C Pulse width 400s duty cycle 2%. (Drain) of part. R is measured at 2 www.irf.com