IRF6644PbF IR MOSFET DirectFET Power MOSFET Typical values (unless otherwise specified) V V R (typ ) Quality Requirement Category: Consumer DSS GS DS(on) . 100V min. 20V max 10.3m 10V Applications Q Q V g tot gd gs(th) RoHS Compliant 28nC 9.0nC 3.7V Lead-Free (Qualified up to 260C Reflow) Application Specifies MOSFETs Ideal for High Performance Isolated Converter S Primary Switch Socket D G D S Optimized for Synchronous Rectification DirectFET ISOMETRIC Low Conduction Losses MN Low Profile (< 0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Applicable DirectFET Outline and Substrate Outline (see pg. 13, 14 for details) SH SJ SP MZ MN Description The IRF6644PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%. The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V-75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high eff iciency and low temperatures, which are key for system reliabil- ity improvements, and makes the device ideal for high performance isolated DC-DC converters. 80 60 55 I = 34A D 70 VGS = 7.0V 50 VGS = 8.0V VGS = 10V 45 60 VGS = 12V 40 50 35 30 40 25 T = 125C J 30 20 15 T = 25C 20 J 10 10 5 0 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 I , Drain Current (A) V Gate -to -Source Voltage (V) D GS, Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Typical On-Resistance vs. Drain Current Final Datasheet Please read the important Notice and Warnings at the end of this document V2.0 www.infineon.com 2017-03-28 R , Drain-to -Source On Resistance (m) DS(on) R (on), Drain-to -Source On Resistance (m ) DSIR MOSFET IRF6644PbF Table of Contents Table of Contents Applications .......1 Description .1 Table of Contents ....2 1 Parameters 3 2 Maximum ratings, Thermal, and Avalanche characteristics 4 3 Electrical characteristics 5 4 Electrical characteristic diagrams 6 Package Information 13 Qualification Information 16 Revision History ..17 Final Datasheet V2.0 2 2017-03-28