PD -91859 IRF7342 HEXFET Power MOSFET l Generation V Technology 1 8 S1 D1 l Ultra Low On-Resistance V = -55V 2 7 DSS l Dual P-Channel Mosfet G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 5 D2 G2 l Dynamic dv/dt Rating R = 0.105 DS(on) l Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Max. Units V Drain- Source Voltage -55 V DS I T = 25C Continuous Drain Current, V 10V -3.4 D C GS I T = 70C Continuous Drain Current, V 10V -2.7 A D C GS I Pulsed Drain Current -27 DM P T = 25C Power Dissipation 2.0 D C W P T = 70C Power Dissipation 1.3 D C Linear Derating Factor 0.016 W/C V Gate-to-Source Voltage 20 V GS V Gate-to-Source Voltage Single Pulse tp<10s 30 V GSM E Single Pulse Avalanche Energy 114 AS dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambient 62.5 C/W JA www.irf.com 1 2/24/99IRF7342 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.054 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.095 0.105 V = -10V, I = -3.4A GS D R Static Drain-to-Source On-Resistance DS(on) 0.150 0.170 V = -4.5V, I = -2.7A GS D V Gate Threshold Voltage -1.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 3.3 S V = -10V, I = -3.1A fs DS D -2.0 V = -55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -25 V = -55V, V = 0V, T = 55C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 26 38 I = -3.1A g D Q Gate-to-Source Charge 3.0 4.5 nC V = -44V gs DS Q Gate-to-Drain Mille) Charge 8.4 13 V = -10V, See Fig. 10 gd GS t Turn-On Delay Time 14 22 V = -28V d(on) DD t Rise Time 10 15 I = -1.0A r D ns t Turn-Off Delay Time 43 64 R = 6.0 d(off) G t Fall Time 22 32 R = 16, f D C Input Capacitance 690 V = 0V iss GS C Output Capacitance 210 pF V = -25V oss DS C Reverse Transfer Capacitance 86 = 1.0MHz, See Fig. 9 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -2.0 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -27 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time 54 80 ns T = 25C, I = -2.0A rr J F Q Reverse RecoveryCharge 85 130 nC di/dt = -100A/s rr Notes: Repetitive rating pulse width limited by I -3.4A, di/dt -150A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 150C J Starting T = 25C, L = 20mH Pulse width 300s duty cycle 2%. J R = 25, I = -3.4A. (See Figure 8) G AS When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com