X-On Electronics has gained recognition as a prominent supplier of IRFR4620TRLPBF-EL MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR4620TRLPBF-EL MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR4620TRLPBF-EL Infineon

IRFR4620TRLPBF-EL electronic component of Infineon
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Part No.IRFR4620TRLPBF-EL
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) DPAK T/R
Datasheet: IRFR4620TRLPBF-EL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.8194 ea
Line Total: USD 2458.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.8194

   
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We are delighted to provide the IRFR4620TRLPBF-EL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR4620TRLPBF-EL and other electronic components in the MOSFETs category and beyond.

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96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications D V 200V DSS High Efficiency Synchronous Rectification in SMPS R typ. Uninterruptible Power Supply 64m DS(on) High Speed Power Switching G max. 78m Hard Switched and High Frequency Circuits I 24A D S Benefits Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness Fully Characterized Capacitance and Avalanche SOA S S D Enhanced body diode dV/dt and dI/dt Capability G G Lead-Free DPak IPAK IRFR4620PbF IRFU4620PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 24 D C GS I T = 100C Continuous Drain Current, V 10V 17 A D C GS I Pulsed Drain Current 100 DM P T = 25C 144 W D C Maximum Power Dissipation Linear Derating Factor 0.96 W/C V Gate-to-Source Voltage 20 V GS 54 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 113 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.045 JC R Junction-to-Ambient (PCB Mount) 50 C/W JA R 110 Junction-to-Ambient JA Notes through are on page 11 www.irf.com 1 06/08/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 64 78 V = 10V, I = 15A DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 200V, V = 0V DSS DS GS A 250 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.6 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 37 S V = 50V, I = 15A DS D Q Total Gate Charge 25 38 I = 15A g D Q Gate-to-Source Charge 8.2 V = 100V gs DS nC Q Gate-to-Drain Mille) Charge 7.9 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 17 I = 15A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 13.4 V = 130V d(on) DD t Rise Time 22.4 I = 15A r D ns t Turn-Off Delay Time 25.4 R = 7.3 d(off) G t Fall Time 14.8 V = 10V f GS C Input Capacitance 1710 V = 0V iss GS C Output Capacitance 125 V = 50V oss DS C Reverse Transfer Capacitance 30 = 1.0MHz (See Fig.5) pF rss C eff. (ER) 113 V = 0V, V = 0V to 160V (See Fig.11) oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 317 V = 0V, V = 0V to 160V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 24 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 100 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 15A, V = 0V SD J S GS t T = 25C V = 100V, Reverse Recovery Time 78 rr J R ns T = 125C I = 15A 99 J F di/dt = 100A/s Q Reverse Recovery Charge 294 T = 25C rr J nC T = 125C 432 J I T = 25C Reverse Recovery Current 7.6 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com

Tariff Desc

8541290095
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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