PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES Features Low VCE (on) Non Punch Through IGBT Technology. I = 12A, T =100C C C Low Diode VF. 10s Short Circuit Capability. G Square RBSOA. t > 10s, T =150C sc J Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature Rated at 175C V typ. = 1.80V CE(on) n-channel Lead-Free Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220 Full-Pak Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 19 C C I T = 100C Continuous Collector Current 12 A C C I Pulse Collector Current (Ref.Fig.C.T.5) 38 CM Clamped Inductive Load current I 38 LM I T = 25C Diode Continuous Forward Current 19 F C I T = 100C Diode Continuous Forward Current 12 F C I Diode Maximum Forward Current 38 FM V RMS Isolation Voltage, Terminal to Case, t = 1 min 2500 V ISOL V Gate-to-Emitter Voltage 20 GE P T = 25C Maximum Power Dissipation 52 W D C P T = 100C Maximum Power Dissipation 26 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 2.9 JC Junction-to-Case- Diode 4.6 C/W R JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient, typical socket mount 62 JA WtWeight 2.0g www.irf.com 1 12/30/03IRGIB15B60KD1P Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.32 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C I = 15A, V = 15V, T = 25C 1.80 2.20 5,6,7 C GE J V I = 15A, V = 15V, T = 150C Collector-to-Emitter Voltage 2.05 2.50 V 9,10,11 CE(on) C GE J I = 15A, V = 15V, T = 175C 2.10 2.60 C GE J V Gate Threshold Voltage 3.5 4.5 5.5 V V = V , I = 250A 9,10,11 GE(th) CE GE C V /T Threshold Voltage temp. coefficient -10 mV/C V = V , I = 1mA (25C-150C) 12 GE(th) J CE GE C gfe Forward Transconductance 10 S V = 50V, I = 15A, PW = 80s CE C 1.0 150 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current 163 500 A V = 0V, V = 600V, T = 150C CES GE CE J 829 1800 V = 0V, V = 600V, T = 175C GE CE J V I = 15A, V = 0V Diode Forward Voltage Drop 1.69 2.30 V 8 FM F GE I = 15A, V = 0V, T = 150C 1.31 1.75 F GE J I = 15A, V = 0V, T = 175C 1.25 1.65 F GE J I Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q Total Gate Charge (turn-on) 56 84 I = 15A 23 g C Q Gate-to-Emitter Charge (turn-on) 7.0 10 nC V = 400V CT1 ge CC Q V = 15V Gate-to-Collector Charge (turn-on) 26 39 gc GE E I = 15A, V = 400V Turn-On Switching Loss 127 140 CT4 on C CC E V = 15V, R = 22, L = 1.07mH Turn-Off Switching Loss 334 422 J off GE G E Ls= 150nH, T = 25C Total Switching Loss 461 556 tot J t Turn-On delay time 30 39 I = 15A, V = 400V d(on) C CC t Rise time 25 35 ns V = 15V, R = 22, L = 1.07mH CT4 r GE G t Turn-Off delay time 173 188 Ls= 150nH, T = 25C d(off) J t Fall time 41 53 f E Turn-On Switching Loss 258 282 I = 15A, V = 400V CT4 on C CC E Turn-Off Switching Loss 570 646 J V = 15V, R = 22, L = 1.07mH 13,15 off GE G E Ls= 150nH, T = 150C Total Switching Loss 829 915 WF1,WF2 tot J t I = 15A, V = 400V Turn-On delay time 30 39 14,16 d(on) C CC t V = 15V, R = 22, L = 1.07mH Rise time 25 35 ns CT4 r GE G t Turn-Off delay time 194 207 Ls= 150nH, T = 150C WF1 d(off) J t Fall time 56 73 WF2 f L Internal Emitter Inductance 7.5 nH Measured 5 mm from package E C Input Capacitance 850 1275 V = 0V ies GE C Output Capacitance 100 150 pF V = 30V 22 oes CC C Reverse Transfer Capacitance 32 48 f = 1.0MHz res T = 150C, I = 38A, Vp = 600V 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE J C V =500V,V = +15V to 0V,R = 22 CT2 CC GE G T = 150C, Vp = 600V, R = 22 SCSOA Short Circuit Safe Operating Area 10 s CT3 J G V =360V,V = +15V to 0V WF4 CC GE I Peak Short Circuit Collector Current 140 A WF4 SC (PEAK) E Reverse Recovery Energy of the Diode 267 347 J T = 150C 17,18,19 rec J t Diode Reverse Recovery Time 67 87 ns V = 400V, I = 15A, L = 1.07mH 20,21 rr CC F I Peak Reverse Recovery Current 23 30 A V = 15V, R = 22 CT4,WF3 rr GE G Q Diode Reverse Recovery Charge 984 1279 nC di/dt = 875A/s rr Vcc =80% (V ), V = 15V, L =100H, R = 22. CES GE G Energy losses includetai and diode reverse recovery. 2 www.irf.com