PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF Features Logic Level HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V = 40V DSS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 3.1m DS(on) Lead-Free G I = 120A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 2 TO-220AB D Pak TO-262 IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 200 D C GS I T = 100C Continuous Drain Current, V 10V 140 A D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 120 D C GS I Pulsed Drain Current 790 DM P T = 25C Power Dissipation 230 W D C Linear Derating Factor 1.5 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 220 mJ AS (Thermally limited) E (Tested ) Single Pulse Avalanche Energy Tested Value 490 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.65 C/W JC R Case-to-Sink, Flat, Greased Surface 0.50 CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB Mount) 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.034 V/C Reference to 25C, I = 1mA (BR)DSS J D 2.5 3.1 V = 10V, I = 75A GS D m R Static Drain-to-Source On-Resistance 4.7 V = 5.0V, I = 40A DS(on) GS D 5.9 V = 4.5V, I = 40A GS D V Gate Threshold Voltage 1.4 2.7 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 120 S V = 10V, I = 75A DS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 16V GSS GS Gate-to-Source Reverse Leakage -200 V = -16V GS Q Total Gate Charge 75 110 I = 75A g D Q Gate-to-Source Charge 28 nC V = 32V gs DS Q Gate-to-Drain Mille) Charge 40 V = 5.0V gd GS t Turn-On Delay Time 19 V = 20V d(on) DD t Rise Time 180 I = 75A r D t Turn-Off Delay Time 30 ns R = 4.0 d(off) G t Fall Time 49 V = 5.0V f GS D Internal Drain Inductance 4.5 Between lead, L D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 5080 V = 0V iss GS C Output Capacitance 970 V = 25V oss DS C Reverse Transfer Capacitance 570 pF = 1.0MHz rss C Output Capacitance 3310 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 870 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1280 V = 0V, V = 0V to 32V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D 200 I Continuous Source Current MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 790 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A , V = 0V SD J S GS t Reverse Recovery Time 26 39 ns T = 25C, I = 75A , V = 20V rr J F DD Q Reverse Recovery Charge 18 27 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by This value determined from sample failure population. 100% max. junction temperature. (See fig. 11). Limited by T , starting T = 25C, tested to this value in production. Jmax J L = 0.079mH, R = 25, I = 75A, V =10V. This is only applied to TO-220AB package. GS G AS When mounted on 1 square PCB (FR-4 or G-10 Material). Part not recommended for use above this value. For recommended footprint and soldering techniques Pulse width 1.0ms duty cycle 2%. refer to application note AN-994. C eff. is a fixed capacitance that gives the same oss Calculated continuous current based on maximum allowable charging time as C while V is rising from 0 to oss DS junction temperature. Bond wire current limit is 120A. Note that 80% V . DSS current limitations arising from heating of the device leads may Limited by T , see Fig.12a, 12b, 15, 16 for typical Jmax occur with some lead mounting arrangements. repetitive avalanche performance. All AC and DC test condition based on former Package limited current of 75A. 2 www.irf.com