PD - 9.1498A IRLIZ44N HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V = 55V DSS l Isolated Package l High Voltage Isolation = 2.5KVRMS = 0.022 R DS(on) l Sink to Lead Creepage Dist. = 4.8mm G l Fully Avalanche Rated I = 30A D Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab TO-220 FULLPAK and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 30 D C GS I T = 100C Continuous Drain Current, V 10V 22 A D C GS I Pulsed Drain Current 160 DM P T = 25C Power Dissipation 45 W D C Linear Derating Factor 0.3 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 210 mJ AS I Avalanche Current 25 A AR E Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns Operating Junction and -55 to + 175 T J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.3 JC C/W R Junction-to-Ambient 65 JA 8/25/97IRLIZ44N Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.070 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.022 V = 10V, I = 17A GS D R Static Drain-to-Source On-Resistance DS(on) = 5.0V, I = 17A 0.025 VGS D 0.035 V = 4.0V, I = 14A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 21 S V = 25V, I = 25A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I GSS nA Gate-to-Source Reverse Leakage -100 V = -16V GS Total Gate Charge 48 I = 25A Q g D Q Gate-to-Source Charge 8.6 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 25 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 11 V = 28V d(on) DD t Rise Time 84 I = 25A r D ns Turn-Off Delay Time 26 R = 3.4, V = 5.0V t d(off) G GS t Fall Time 15 R = 1.1, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 1700 V = 0V iss GS Output Capacitance 400 V = 25V Coss DS pF C Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5 rss C Drain to Sink Capacitance 12 = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D Continuous Source Current MOSFET symbol I S 30 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 160 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 17A, V = 0V SD J S GS Reverse Recovery Time 80 120 ns T = 25C, I = 25A trr J F Q Reverse RecoveryCharge 210 320 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) V = 15V, starting T = 25C, L = 470H t=60s, =60Hz DD J R = 25, I = 25A. (See Figure 12) G AS Uses IRLZ44N data and test conditions I 25A, di/dt 270A/s, V V , SD DD (BR)DSS T 175C J