PD- 95223 IRLL3303PbF Surface Mount HEXFET Power MOSFET Dynamic dv/dt Rating D Logic-Level Gate Drive V = 30V DSS Fast Switching Ease of Paralleling R = 0.031 Advanced Process Technology DS(on) G Ultra Low On-Resistance Lead-Free I = 4.6A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. SOT-223 Its unique package design allows for easy automatic pick- and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V** 6.5 D A GS I T = 25C Continuous Drain Current, V 10V* 4.6 D A GS A I T = 70C Continuous Drain Current, V 10V* 3.7 D A GS I Pulsed Drain Current 37 DM P T = 25C Power Dissipation (PCB Mount)** 2.1 W D A P T = 25C Power Dissipation (PCB Mount)* 1.0 W D A Linear Derating Factor (PCB Mount)* 8.3 mW/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 140 mJ AS I Avalanche Current 4.6 A AR E Repetitive Avalanche Energy 0.10 mJ AR dv/dt Peak Diode Recovery dv/dt 1.3 V/ns T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Amb. (PCB Mount, steady state)* 93 120 JA C/W R Junction-to-Amb. (PCB Mount, steady state)** 48 60 JA * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 04/27/04IRLL3303PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.034 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.031 V = 10V, I = 4.6A GS D R Static Drain-to-Source On-Resistance DS(on) 0.045 V = 4.5V, I = 2.3A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 5.5 S V = 10V, I = 2.3A fs DS D 25 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 250 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -16V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 16V GS Q Total Gate Charge 34 50 I = 4.6A g D Q Gate-to-Source Charge 4.4 6.5 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 10 16 V = 10V, See Fig. 6 and 9 gd GS t Turn-On Delay Time 7.2 V = 15V d(on) DD t Rise Time 22 I = 4.6A r D ns t Turn-Off Delay Time 33 R = 6.2 d(off) G t Fall Time 28 R = 3.2, See Fig. 10 f D C Input Capacitance 840 V = 0V iss GS C Output Capacitance 340 pF V = 25V oss DS C Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S 0.91 (Body Diode) showing the A I Pulsed Source Current integral reverse SM 37 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 4.6A, V = 0V SD J S GS t Reverse Recovery Time 65 98 ns T = 25C, I = 4.6A rr J F Q Reverse RecoveryCharge 160 240 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Specification changes Rev. Parameters Old spec. New spec. Comments Revision Date 1V (Max.) 2.5V No spec. Removed V (Max). Specification 11/1/96 GS(th) GS(th) 1V (Max.) 20 16 Decrease V (Max). Specification 11/1/96 GS GS Notes: Repetitive rating pulse width limited by I 4.6A, di/dt 110A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 150C J V = 15V, starting T = 25C, L = 13mH Pulse width 300s duty cycle 2%. DD J R = 25, I = 4.6A. (See Figure 12) G AS 2 www.irf.com