%&& IRL6372PbF HEXFET Power MOSFET V 30 V DS V 12 V GS R DS(on) max 17.9 m ( V = 4.5V) GS Q 11 nC g (typical) SO-8 I D 8.1 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRL6372PBF SO-8 Tube/Bulk 95 IRL6372TRPBF SO-8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 DS V 12 V Gate-to-Source Voltage GS Continuous Drain Current, V 4.5V 8.1 I T = 25C GS D A I T = 70C Continuous Drain Current, V 4.5V 6.5 A GS D A I Pulsed Drain Current 65 DM 2.0 P T = 25C Power Dissipation A D W 1.3 P T = 70C Power Dissipation A D 0.02 Linear Derating Factor W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 01/17/2011 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V / T Breakdown Voltage Temp. Coefficient 23 mV/C D DSS J V = 4.5V, I = 8.1A R 14.0 17.9 GS D DS(on) Static Drain-to-Source On-Resistance m V = 2.5V, I = 6.5A 17.0 23.0 GS D V V = V , I = 10A GS(th) Gate Threshold Voltage 0.5 1.1 V DS GS D V Gate Threshold Voltage Coefficient -4.0 mV/C GS(th) V = 24V, V = 0V I Drain-to-Source Leakage Current 1.0 DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA V = -12V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 6.5A gfs Forward Transconductance 30 S DS D Q Total Gate Charge 11 g Q Pre-Vth Gate-to-Source Charge 0.01 V = 4.5V gs1 GS Q V = 15V Post-Vth Gate-to-Source Charge 0.50 DS gs2 nC Q I = 6.5A Gate-to-Drain Charge 4.8 D gd Q Gate Charge Overdrive 5.69 godr Q Switch Charge (Q + Q ) 5.3 sw gs2 gd R Gate Resistance 2.2 G t V = 15V, V = 4.5V d(on) Turn-On Delay Time 5.9 DD GS t I = 6.5A r Rise Time 13 D ns t R = 6.8 Turn-Off Delay Time 34 G d(off) t See Figs. 18 Fall Time 15 f C V = 0V Input Capacitance 1020 GS iss V = 25V C Output Capacitance 98 pF DS oss C Reverse Transfer Capacitance 68 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.0 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 65 p-n junction diode. S (Body Diode) V T = 25C, I = 6.5A, V = 0V SD Diode Forward Voltage 1.2 V J S GS t Reverse Recovery Time 13 20 ns T = 25C, I = 6.5A, V = 24V rr DD J F Q di/dt = 100/s rr Reverse Recovery Charge 5.3 8.0 nC Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 62.5 JA Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T of approximately 90C. J 2 www.irf.com