Data Sheet No. PD60299 IRS212(7, 71, 8, 81)(S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V V 600 V max. OFFSET Tolerant to negative transient voltage dV/dt immune Application-specific gate drive range: I +/- 200 mA / 420 mA O Motor Drive: 12 V to 20 V (IRS2127/IRS2128) Automotive: 9 V to 20 V (IRS21271/IRS21281) V 12 V - 20V 9 V - 20 V OUT Undervoltage lockout (IRS2127/IR2128) (IRS21271/IR21281) 3.3 V, 5 V, and 15 V input logic compatible FAULT lead indicates shutdown has occured Output in phase with input (IRS2127/IRS21271) V 250 mV or 1.8 V CSth Output out of phase with input (IRS2128/IRS21281) RoHS compliant t (typ.) 150 ns & 150 ns on/off Description Packages The IRS2127/IRS2128/IRS21271/IRS21281 are high voltage, high speed power MOSFET and IGBT drivers. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construc- tion. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3 V. The protec- tion circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An 8-Lead PDIP 8-Lead SOIC open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating chan- nel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V. Typical Connection V V V CC CC B IN IN HO FAULT FAULT CS COM V S V V V IRS2127/IRS21271 CC CC B IN IN HO FAULT FAULT CS (Refer to Lead Assignments for correct pin configuration). COM V S These diagrams show electrical connections only. Please refer to our Application Notes and DesignTips for proper IRS2128/IRS21281 circuit board layout. www.irf.com 1IRS212(7, 71, 8, 81)(S)PbF Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V High-side floating supply voltage -0.3 625 B V High-side floating offset voltage V - 25 V + 0.3 S B B V High-side floating output voltage V - 0.3 V + 0.3 HO S B V Logic supply voltage -0.3 25 V CC V Logic input voltage -0.3 V + 0.3 IN CC V FAULT output voltage -0.3 V + 0.3 FLT CC V Current sense voltage V - 0.3 V + 0.3 CS S B dV /dt Allowable offset supply voltage transient 50 V/ns s 8-Lead DIP 1.0 P Package power dissipation TA +25 C W D 8-Lead SOIC 0.625 8-Lead DIP 125 Rth Thermal resistance, junction to ambient C/W JA 8-Lead SOIC 200 T Junction temperature 150 J T Storage temperature -55 150 C S T Lead temperature (soldering, 10 seconds) 300 L Recommended Operating Conditions The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the recommended conditions. The V offset rating is tested with all supplies biased at 15 V differential. S Symbol Definition Min. Max. Units (IRS2127/IRS2128) V + 12 V + 20 S S V High-side floating supply voltage B (IRS21271/IRS21281) V + 9 V + 20 S S V High-side floating offset voltage Note 1 600 S V High-side floating output voltage V V HO S B V V Logic supply voltage 10 20 CC V Logic input voltage 0 V IN CC V FAULT output voltage 0 V FLT CC V Current sense signal voltage V V + 5 CS S S T Ambient temperature -40 125 C A Note 1: Logic operational for V of -5 V to +600 V. Logic state held for V of -5 V to -V . (Please refer to the Design Tip S S BS DT97-3 for more details). www.irf.com 2