IRS21851SPBF Infineon

Data Sheet PD No. 60255 revA Not recommended for new design: please use IRS21850 IRS21851SPbF SINGLE HIGH SIDE DRIVER IC Features Product Summary Gate drive supply range from 10 V to 20 V Undervoltage lockout for V and V BS CC V 600 V max. OFFSET 3.3 V and 5 V input logic compatible Tolerant to negative transient voltage I +/- 4 A / 4 A O Matched propagation delays for all channels RoHS compliant V 10 V - 20 V OUT Description t (typ.) 160 ns & 160 ns on/off The IRS21851 is a high voltage, high speed power MOSFET and IGBT single high-side driver with propa- Package gation delay matched output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The floating logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic and can be operated up to 600 V above the ground. The output driver features a high pulse current buffer stage designed for mini- mum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET 8-Lead SOIC IRS21851 or IGBT in the high- side configuration, which oper- ates up to 600 V. Typical Connection up to 600V V CC V V CC B IN IN HO TO V LOAD S COM (Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1IRS21851SPbF Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V Low-side supply voltage -0.3 20 (Note 1) CC V Logic input voltage (HIN) COM -0.3 V + 0.3 IN CC V High-side floating well supply voltage -0.3 620 (Note 1) B V V High-side floating well supply return voltage V - 20 V + 0.3 S B B V Floating gate drive output voltage V - 0.3 V + 0.3 HO S B dV /dt Allowable V offset supply transient relative to COM 50 V/ns s S P Package power dissipation T +25 C 1.25 W D A Rth Thermal resistance, junction to ambient 100 C/W JA T Junction temperature -55 150 J T Storage temperature -55 150 C S T Lead temperature (soldering, 10 seconds) 300 L Note 1: All supplies are fully tested at 25 V. An internal 20 V clamp exists for each supply. Recommended Operating Conditions For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM. The offset rating are tested with supplies of (V -COM)=(V -V )=15 V. CC B S Symbol Definition Min. Max. Units V Low-side supply voltage 10 20 CC V HIN input voltage COM V IN CC V High-side floating well supply voltage V + 10 V + 20 B S S V V High-side floating well supply offset voltage Note 2 600 S V Floating gate drive output voltage V V HO S B T Ambient temperature -40 125 C A Note 2: Logic operational for V of -5 V to 600 V. Logic state held for V of -5 V to -V . (Please refer to the Design S S BS Tip DT97-3 for more details). www.irf.com 2