IRS2509SPBF Infineon

Not recommended for new designs. For new designs, we recommend IRS2109SPBF November 15, 2010 IRS2509SPbF HALF-BRIDGE DRIVER Features Packages 600V half-bridge driver Tolerant to negative transient voltages Gate drive supply range from 10 V to 20 V Under-voltage lock-out for both channels 3.3 V, 5 V and 15 V input logic compatible 8-Lead SOIC Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Product Summary Internal 530 ns dead-time Lower di/dt gate driver for better noise immunity V 600 V max. OFFSET Shut down input turns off both channels I 120 mA / 250 mA O+/- V 10 V 20 V RoHS compliant OUT t (typ.) 750 ns & 200 ns on/off Dead Time 530 ns Description Applications: The IRS2509 is a high-voltage, high-speed power MOSFET *HID Electronic Ballasts and IGBT half-bridge driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable a ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. Typical Connection Not recommended for new designs. For new designs, we recommend IRS2109SPBF IRS2509SPbF Qualification Information Industrial (per JEDEC JESD 47) Qualification Level Comments: This IC has passed JEDECs Industrial qualification. IRs Consumer qualification level is granted by extension of the higher Industrial level. MSL2 SOIC-8N Moisture Sensitivity Level (per IPC/JEDEC J-STD-020) Class B (+/-200V) Machine Model (per JEDEC standard JESD22-A115) ESD Class 1C (+/-1000V) Human Body Model (per EIA/JEDEC standard EIA/JESD22-A114) Class I, Level A IC Latch-Up Test (per JESD78A) Yes RoHS Compliant Qualification standards can be found at International Rectifiers web site