IRSM005-301MH Half-Bridge IPM for Low Voltage Applications 30A, 100V Description The IRSM005-301MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where power density is of critical importance. Typical examples would be advanced motor drives, dc-to-ac and dc- to-dc converters. Features Package with low thermal resistance and minimal parasitics Low on-resistance HEXFETs: 16 m typ. Undervoltage lockout on Vcc and Vbs Independent gate drive in phase with logic input Gate drive supply range from 10V to 20V Propagation delay matched to defined spec 3.3V, 5V and 15V logic input compatible RoHS compliant Internal Electrical Schematic Ordering Information Orderable Part Number Package Type Form Quantity IRSM005-301MH PQFN 7x8mm Tray 1300 IRSM005-301MHTR PQFN 7x8mm Tape and Reel 2000 1 www.irf.com 2014 International Rectifier March 18, 2014 IRSM005-301MH Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to V unless otherwise SS stated in the table. The thermal resistance rating is measured under board mounted and still air conditions. Symbol Description Min Max Unit V MOSFET Drain-to-Source Voltage DS --- 100 V I Maximum DC current per MOSFET T =25C (Note1) O C --- 30 A P Maximum Power dissipation per MOSFET T =100C d C --- 13.5 W T (MOSFET & IC) Maximum Operating Junction Temperature J --- 150 C T Storage Temperature Range S -40 150 C V High side floating supply voltage B -0.3 VS + 20 V V High side floating supply offset voltage S VB - 20 VB +0.3 V V Low Side fixed supply voltage CC -0.3 20 V V Logic input voltage LIN, HIN IN -0.3 VCC+0.3V V Note1: Calculated based on maximum junction temperature. Bond wires current limit is 20A Inverter Static Electrical Characteristics V (V , V )=15V, TJ=25C, unless otherwise specified. BIAS CC BS Symbol Description Min Typ Max Units Conditions V Drain-to-Source Breakdown Voltage 100 --- --- V H =L =0V, I =250A (BR)DSS IN IN D V Gate Threshold Voltage 2.0 3.0 4.0 V I =100A GS(TH) D --- 16 21 I =10A, T =25C D J R Drain-to-Source Voltage m DS(ON) --- 35 --- I =10A, T =150C D J + --- 20 --- H =L =0V, V =100V IN IN I Zero Gate Voltage Drain Current A DSS + H =L =0V, V =100V, IN IN --- 250 --- T =125C J -- 0.7 0.82 I =10A F MOSFET Diode Forward Voltage V V SD Drop --- 0.6 --- I =10A, T =125C F J I Gate to Source leakage --- --- +/-100 nA V =+/-20V GSS GS + V = 100V, RBSOA Reverse Bias Safe Operating Area FULL SQUARE, limited by TJmax V =+15V to 0V CC Q G Total gate charge --- 36 54 I =26A D Q GS nC V = 20V DS Gate to source charge --- 7 --- VGS=10V Q GD Gate to drain charge --- 11 --- EAS Single Pulse Avalanche Energy 6.1 - mJ 2 www.irf.com 2014 International Rectifier March 18, 2014