IRSM808-105MH Infineon

IRSM808-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM808-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR s technology offers an extremely compact, high performance half-bridge topology in an isolated package. This advanced IPM offers a combination of IR s low R Trench FREDFET technology and the DS(on) industry benchmark half-bridge high voltage, rugged driver in a small PQFN package. At only 8x9mm and featuring integrated bootstrap functionality, the compact footprint of this surface-mount package makes it suitable for applications that are space-constrained. IRSM808-105MH functions without a heat sink. Features Integrated gate drivers and bootstrap functionality Suitable for sinusoidal modulation applications Low R Trench FREDFET DS(on) Under-voltage lockout for both channels IRSM808-105MH Matched propagation delay for all channels Optimized dV/dt for loss and EMI trade offs 3.3V input logic compatible Active high HIN and active low LIN Motor Power range 80-200W Isolation 1500V min RMS ROHS compliant Internal Electrical Schematic VB IRSM808-105MH V+ VCC HIN Vs 600V Half Bridge driver with built LIN in bootstrap DT V- COM Ordering Information Orderable Part Number Package Type Form Quantity IRSM808-105MH PQFN 8x9mm Tray 1300 IRSM808-105MHTR PQFN 8x9mm Tape and Reel 2000 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to V unless otherwise stated in the table. The SS thermal resistance rating is measured under board mounted and still air conditions. Symbol Description Min Max Unit BV MOSFET Blocking Voltage DSS --- 500 V I Output DC Current per MOSFET T =25C O C --- 10 A P Power dissipation per MOSFET T =100C d C --- 55 W T (MOSFET & IC) Maximum Operating Junction Temperature J --- 150 C T Lead temperature (soldering 30 seconds) L --- 260 C T Storage Temperature Range S -40 150 C V High side floating supply voltage B -0.3 VS + 20 V V High side floating supply offset voltage S VB - 20 VB +0.3 V V Low Side fixed supply voltage CC -0.3 20 V VIN Logic input voltage LIN, HIN -0.3 VCC+0.3 V V Isolation voltage (1min) (Note2) ISO --- 1500 V RMS Note1: Calculated based on maximum junction temperature. Bond wires current limit is 3.5A. Note2: Characterized, not tested at manufacturing Recommended Operating Conditions Symbol Description Min Typ Max Units Conditions + V Positive DC Bus Input Voltage --- --- 400 V V High Side Floating Supply Offset Voltage (Note 3) --- 400 V S1,2,3 V High Side Floating Supply Voltage V +12 --- V +20 V B1,2,3 S S V Low Side and Logic Supply Voltage 13.5 --- 16.5 V CC V Logic Input Voltage COM --- V V IN CC F PWM Carrier Frequency --- --- 20 kHz p For proper operation the module should be used within the recommended conditions. All voltages are absolute referenced to COM. The V S offset is tested with all supplies biased at 15V differential. Note 3: Logic operational for V from COM-8V to COM+500V. Logic state held for V from COM-8V to COM-V . s s BS 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback May 18, 2014