SMBT3906E6327BT Infineon

SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3904S / U: for orientation in reel see package information below 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT3906S/U C1 B2 E2 6 54 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 s2A 1=B 2=E 3=C - - - SOT23 SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Pb-containing package may be available upon special request 1 2008-02-29SMBT3906...MMBT3906 Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage V CEO 40 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 200 mA Collector current I C mW Total power dissipation- P tot T 71 C 330 S T tbd C 250 S T 115 C 250 S T 105 C 330 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS SMBT3906/ MMBT3906 240 SMBT3906S 140 SMBT3906U 135 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2008-02-29