Technische Information / technical information Netz-Thyristor T1401N Phase Control Thyristor Key Parameters enndaten V / V 3800V 4400V DRM RRM I 1590A (T =85C) TAVM C I 40000A TSM 3570A (T =55C) C v 1,29V T0 r 0,33m T R 9,0K/kW thJC Clamping Force 36 52kN Max. Diameter 121mm Contact Diameter 86mm Height 35mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T1401N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM T = -40C... T 3800 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max Elektrische Eigenschaften 4000 V repetitive peak forward off-state and reverse voltage 4200 V 4400 V I 2500 A Durchlastrom-Grenzeffektivwert T = 85 C TRMSM C maximum RMS on-state current I 1590 A Dauergrenzstrom T = 85 C TAVM C average on-state current T = 70 C 1960 A C T = 55 C C 2290 A I TSM Stostrom-Grenzwert T = 25 C, t = 10 ms 40000 A vj P surge current T = T , t = 10 ms vj vj max P 36000 A It Grenzlastintegral T = 25 C, t = 10 ms 8000 10 As vj P It-value T = T , t = 10 ms 6480 10 As vj vj max P 300 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G 2000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / characteristic values Durchlaspannung T = T , i = 2000A v typ. 1,7 V vj vj max T T Max. 1,95 V on-state voltage Schleusenspannung Tvj = Tvj max V(TO) typ. 1,1 V max. 1,29 V threshold voltage Ersatzwiderstand T = T r typ. 0,3 m vj vj max T Max. 0,33 m slope resistance A -0,0105 Durchlakennlinie 200A i 2500A T = T typ. F vj vj max B 0,000182 on-state characteristic C 0,13062 D 0,008028 v A B i C Ln( i 1) D i A -0,0266 T max. T T T B 0,00025 C 0,1662 D 0,005006 T = 25C, v = 12 V vj D I max. 350 mA Zndstrom GT gate trigger current T = 25C, v = 12 V vj D V max. 2,5 V Zndspannung GT gate trigger voltage T = T , v = 12 V I max. 20 mA Nicht zndender Steuerstrom vj vj max D GD Tvj = Tvj max , vD = 0,5 VDRM max. 10 mA gate non-trigger current T = T , v = 0,5 V V max. 0,4 V Nicht zndende Steuerspannung vj vj max D DRM GD gate non-trigger voltage T = 25C, v = 12 V I max. 350 mA Haltestrom vj D H holding current T = 25C, v = 12 V, R 10 I max. 3 A Einraststrom vj D GK L iGM = 3 A, diG/dt = 6 A/s, tg = 20 s latching current T = T i , i max. 400 mA Vorwrts- und Rckwrts-Sperrstrom vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM DIN IEC 60747-6 t max. 2 s Zndverzug gd T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G date of publication: 2011-05-02 prepared by: TM revision: approved by: JP 6.0 Date of Publication: 2011-05-02 Revision: 6.0 Seite/page: 2/11