X-On Electronics has gained recognition as a prominent supplier of T1851N60TOH SCR Modules across the USA, India, Europe, Australia, and various other global locations. T1851N60TOH SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

T1851N60TOH Infineon

T1851N60TOH electronic component of Infineon
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Part No.T1851N60TOH
Manufacturer: Infineon
Category: SCR Modules
Description: Infineon Technologies SCR Modules NETZ-THYRISTOR PHASE CONTROL
Datasheet: T1851N60TOH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1 : USD 2520.9571
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Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
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Minimum Operating Temperature
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Off-State Leakage Current Vdrm Idrm
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We are delighted to provide the T1851N60TOH from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T1851N60TOH and other electronic components in the SCR Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor T 1851N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 6000 6500 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM Kenndaten 7000 V repetitive peak forward off-state and reverse voltage Elektrische Eigenschaften Durchlastrom-Grenzeffektivwert I 3940 A TRMSM maximum RMS on-state current Dauergrenzstrom T = 85 C I 1850 A C TAVM 2510 A average on-state current T = 60 C C Stostrom-Grenzwert T = 25 C, t = 10 ms I 50000 A vj P TSM 48000 A surge current T = T , t = 10 ms vj vj max P Grenzlastintegral T = 25 C, t = 10 ms It 12500 10 As vj P 11500 10 As It-value T = T , t = 10 ms vj vj max P Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) 300 A/s T cr f = 50 Hz, i = 3 A, di /dt = 6 A/s critical rate of rise of on-state current GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 2000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / Characteristic values typ. 2,45 V Durchlaspannung T = T , i = 3000A v vj vj max T T max. 2,65 V on-state voltage typ. 1,2 V Schleusenspannung T = T V vj vj max (TO) max. 1,22 V threshold voltage typ. 0,417 m Ersatzwiderstand T = T r vj vj max T max. 0,477 m slope resistance typ. A 0,774 Durchlakennlinie 300A i 3500A T = T F vj vj max on-state characteristic B 0,000186 C -0,0199 D 0,0235 max. A 0,623 v = A + B i + C Ln(i + 1) + D i T B 0,000271 T T T C 0,0346 D 0,0173 350 Zndstrom T = 25C, v = 12 V I max. mA vj D GT gate trigger current 2,5 Zndspannung T = 25C, v = 12 V V max. V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12 V I max. 20 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 10 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,4V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12 V I max. 350mA vj D H holding current Einraststrom T = 25C, v = 12 V, R 10 I max. 3A vj D GK L latching current i = 3 A, di /dt = 6 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 500mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 2s gd gate controlled delay time T = 25 C,i = 3 A, di /dt = 6 A/s vj GM G C. Schneider date of publication: 2006-05-05 prepared by: revision: 5 approved by: J. Przybilla BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 1/9 Datenblatt / Data sheet N Netz-Thyristor T 1851N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values typ. 600 s Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften max. 12 mAs Sperrverzgerungsladung T = T Q vj vj max r recovered charge i = I , -di /dt = 10 A/s TM TAVM T V = 0,5V , V = 0,8V R RRM RM RRM max. 280 A Rckstromspitze T = T I vj vj max RM peak reverse recovery current i = I , -di /dt = 10 A/s TM TAVM T V = 0,5V , V = 0,8V R RRM RM RRM Thermische Eigenschaften / Thermal properties Khlflche / cooling surface R Innerer Wrmewiderstand thJC beidseitig / two-sided, = 180sin max. 0,0065 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,006 C/W Anode / anode, DC max. 0,011 C/W Kathode / cathode, DC max. 0,013 C/W bergangs-Wrmewiderstand Khlflche / cooling surface R thCH beidseitig / two-sided max. 0,002 C/W thermal resistance, case to heatsink einseitig / single-sided max. 0,004 C/W Hchstzulssige Sperrschichttemperatur T 125C vj max maximum junction temperature Betriebstemperatur T -40...+125 C c op operating temperature Lagertemperatur T -40...+150 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 45...65 kN clamping force Steueranschlsse DIN 46244 Gate A 4,8x0,8 control terminals Kathode /Cathode A 6,3x0,8 Gewicht G typ. 1500g weight Kriechstrecke 33mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 2/9

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