Technische Information / technical information Netz-Thyristor T1900N Phase Control Thyristor Key Parameters VDRM / VRRM 1600V - 1800V ITAVM 1810A (TC=85 C) ITSM 30700A V 0,83V T0 rT 0,15m RthJC 17K/kW Clamping Force 24...56kN Max. Diameter 75 mm Contact Diameter 50 mm Height 26,5 mm For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor T1900N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1800 V repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stossspitzensperrspannung T = -40C... T V vj vj max DSM 1800 V non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stossspitzensperrspannung T = +25C... T V vj vj max RSM 1900 V non-repetitive peak reverse voltage Durchlassstrom-Effektivwert T = 85C I 2840 A C TRMS RMS on-state current 1810 A Dauergrenzstrom T = 85C I C TAVM average on-state current 2490 A Dauergrenzstrom T = 55C, = 180sin, t = 10ms I C P TAVM average on-state current Durchlastrom-Effektivwert I 3900 A TRMS RMS on-state current T = 25C, t = 10ms 39000 A Stossstrom-Grenzwert vj P I TSM 30700 A T = T , t = 10ms surge current vj vj max P 7605 10 As Grenzlastintegral T = 25C, t = 10ms It vj P 4713 10 As It-value T = T , t = 10ms vj vj max P 200 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 1A, di /dt = 1A/s GM G 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / Characteristic values Durchlassspannung T = T , i = 1,8kA v max. 1,1 V vj vj max T T on-state voltage max 0,83 V Schleusenspannung T = T V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r max 0,15 m vj vj max T slope resistance Durchlasskennlinie 200A i 3600A T = T A= 5,636E-01 T vj vj max on-state characteristic B= 8,645E-05 C= 1,727E-02 v A B i C ln(i 1) D i T T T T D= 5,882E-03 Zndstrom T = 25C, v = 12V I max. 250 mA vj D GT gate trigger current Zndspannung T = 25C, v = 12V V max. 2 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V I max. 500 mA vj D H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 2500 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 300 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 tgd max. 4 s gate controlled delay time T = 25C, i = 1A, vj GM di /dt = 1A/s G prepared by: HR date of publication: 2021-03-10 approved by: MS revision: 3.1 Date of publication: 2021-03-10 Seite/page 2/10 Revision: 3.1