X-On Electronics has gained recognition as a prominent supplier of T2001N34TOF SCR Modules across the USA, India, Europe, Australia, and various other global locations. T2001N34TOF SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

T2001N34TOF Infineon

T2001N34TOF electronic component of Infineon
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Part No.T2001N34TOF
Manufacturer: Infineon
Category: SCR Modules
Description: SCR Modules NETZ-THYRISTOR PHASE CONTROL
Datasheet: T2001N34TOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2100.7956
N/A

Obsolete
   
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Packaging
Current Rating
Off-State Leakage Current Vdrm Idrm
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We are delighted to provide the T2001N34TOF from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T2001N34TOF and other electronic components in the SCR Modules category and beyond.

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Technische Information / technical information Netz-Thyristor T2001N Phase Control Thyristor Key Parameters enndaten V / V 3200V 3600V DRM RRM I 2060A (T =85C) TAVM C I 44000A TSM 3570A (T =55C) C v 1,0V T0 r 0,25m T R 8,0K/kW thJC Clamping Force 36 52kN Max. Diameter 121mm Contact Diameter 86mm Height 26mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T2001N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM 3200 V T = -40C... T Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max 3400 V Elektrische Eigenschaften repetitive peak forward off-state and reverse voltage 3600 V I TRMSM 3200 A Durchlastrom-Grenzeffektivwert T = 85 C C maximum RMS on-state current I 2040 A Dauergrenzstrom T = 85 C TAVM C 2490 A average on-state current T = 70 C C TC = 55 C 2890 A I TSM Stostrom-Grenzwert T = 25 C, t = 10 ms 44000 A vj P surge current T = T , t = 10 ms vj vj max P 41000 A It Grenzlastintegral T = 25 C, t = 10 ms 9680 10 As vj P It-value T = T , t = 10 ms 8400 10 As vj vj max P Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) 300 A/s T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / characteristic values Durchlaspannung T = T , i = 2000A v typ. 1,35 V vj vj max T T Max. 1,5 V on-state voltage Schleusenspannung T = T V typ. 0,9 V vj vj max (TO) max. 1 V threshold voltage Ersatzwiderstand T = T r typ. 0,225 m vj vj max T Max. 0,250 m slope resistance A -0,0978 Durchlakennlinie 200A i 2500A T = T typ. F vj vj max B 0,000187 on-state characteristic C 0,15 D -0,00173 A -0,0981 max. B 0,000153 C 0,143 v A B i C Ln( i 1) D i T T T T D 0,00466 T = 25C, v = 12 V I max. 350 mA Zndstrom vj D GT gate trigger current T = 25C, v = 12 V vj D V max. 2,5 V Zndspannung GT gate trigger voltage T = T , v = 12 V I max. 20 mA Nicht zndender Steuerstrom vj vj max D GD T = T , v = 0,5 V max. 10 mA gate non-trigger current vj vj max D DRM T = T , v = 0,5 V V max. 0,4 V Nicht zndende Steuerspannung vj vj max D DRM GD gate non-trigger voltage T = 25C, v = 12 V I max. 350 mA Haltestrom vj D H holding current T = 25C, v = 12 V, R 10 I max. 3 A Einraststrom vj D GK L i = 3 A, di /dt = 6 A/s, t = 20 s latching current GM G g T = T i , i max. 400 mA Vorwrts- und Rckwrts-Sperrstrom vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM DIN IEC 60747-6 t max. 1,5 s Zndverzug gd T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G date of publication: 2011-05-02 prepared by: TM revision: approved by: JP 7.0 Date of Publication: 2011-05-02 Revision: 7.0 Seite/page: 2/11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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