X-On Electronics has gained recognition as a prominent supplier of T201N65TOH SCR Modules across the USA, India, Europe, Australia, and various other global locations. T201N65TOH SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

T201N65TOH Infineon

T201N65TOH electronic component of Infineon
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Part No.T201N65TOH
Manufacturer: Infineon
Category: SCR Modules
Description: SCR Modules PHASE CONTROL THYRISTOR
Datasheet: T201N65TOH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6: USD 973.8436 ea
Line Total: USD 5843.06 
Availability - 0
MOQ: 6  Multiples: 6
Pack Size: 6
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 6
Multiples : 6
6 : USD 973.8436

   
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Current Rating
Brand
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We are delighted to provide the T201N65TOH from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T201N65TOH and other electronic components in the SCR Modules category and beyond.

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Technische Information / technical information Netz-Thyristor T201N Phase Control Thyristor Key Parameters enndaten V / V 6000V 7000V DRM RRM I 245A (T =85C) TAVM C I 4700A TSM 3570A (T =55C) C v 1,29V T0 r 4,22m T R 40,0K/kW thJC Clamping Force 7 12kN Max. Diameter 58,5mm Contact Diameter 34mm Height 26mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T201N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM T = -40C... T 6000 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max Elektrische Eigenschaften 6500 V repetitive peak forward off-state and reverse voltage 7000 V I 385 A Durchlastrom-Grenzeffektivwert T = 85 C TRMSM C maximum RMS on-state current I 245 A Dauergrenzstrom T = 85 C TAVM C average on-state current T = 70 C 295 A C T = 55 C C 340 A I TSM Stostrom-Grenzwert T = 25 C, t = 10 ms 4700 A vj P surge current T = T , t = 10 ms vj vj max P 4200 A It Grenzlastintegral T = 25 C, t = 10 ms 110,5 10 As vj P It-value T = T , t = 10 ms 88,2 10 As vj vj max P 300 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G 2000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / characteristic values Durchlaspannung T = T , i = 500A v typ. 3,25 V vj vj max T T Max. 3,4 V on-state voltage Schleusenspannung T = T V typ. 1,24 V vj vj max (TO) max. 1,29 V threshold voltage Ersatzwiderstand T = T r typ. 4,02 m vj vj max T Max. 4,22 m slope resistance A 0,02009 Durchlakennlinie 50A i 600A T = T typ. F vj vj max B 0,002673 on-state characteristic C 0,2013 D 0,02847 A -0,457 max. v A B i C Ln( i 1) D i T T T T B 0,003951 C 0,4384 D -0,03762 T = 25C, v = 12 V Zndstrom vj D IGT max. 350 mA gate trigger current T = 25C, v = 12 V Zndspannung vj D V max. 2,5 V GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12 V I max. 20 mA vj vj max D GD T = T , v = 0,5 V max. 10 mA gate non-trigger current vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,4 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12 V I max. 350 mA vj D H holding current Einraststrom T = 25C, v = 12 V, R 10 I max. 3 A vj D GK L i = 3 A, di /dt = 6 A/s, t = 20 s latching current GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 100 mA vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 2 s gd T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G prepared by: TM date of publication: 2011-05-02 approved by: JP revision: 7.0 Date of Publication: 2011-05-02 Revision: 7.0 Seite/page: 2/11

Tariff Desc

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Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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