X-On Electronics has gained recognition as a prominent supplier of T2851N52TOH SCR Modules across the USA, India, Europe, Australia, and various other global locations. T2851N52TOH SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

T2851N52TOH Infineon

T2851N52TOH electronic component of Infineon
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Part No.T2851N52TOH
Manufacturer: Infineon
Category: SCR Modules
Description: SCR Modules 5.2KV 70KA
Datasheet: T2851N52TOH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3376.7154 ea
Line Total: USD 3376.72 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3376.7154

   
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Packaging
Current Rating
Off-State Leakage Current Vdrm Idrm
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Factory Pack Quantity :
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We are delighted to provide the T2851N52TOH from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T2851N52TOH and other electronic components in the SCR Modules category and beyond.

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Technische Information / technical information Netz-Thyristor T2851N Phase Control Thyristor enndaten Key Parameters V / V 5200 V DRM RRM I 2980 A (T =85C) TAVM C I 82000 A TSM 3570A (T =55C) C V 0,765 V T0 r 0,234 m T R 5,0 K/kW thJC Clamping Force 63 91 kN Max. Diameter 151,5 mm Contact Diameter 100 mm Height 35 mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T2851N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM T = -40C... T 4200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max Elektrische Eigenschaften 4800 V repetitive peak forward off-state and reverse voltage 5000 V 5200 V I TRMSM 4680 A Durchlastrom-Grenzeffektivwert T = 85 C C maximum RMS on-state current Dauergrenzstrom T = 85 C I 2980 A C TAVM average on-state current T = 70 C 3590 A C T = 55 C C 4120 A I Stostrom-Grenzwert T = 25 C, t = 10 ms TSM 82000 A vj P surge current T = T , t = 10 ms vj vj max P 79000 A It Grenzlastintegral T = 25 C, t = 10 ms 33500 10 As vj P It-value T = T , t = 10 ms 31000 10 As vj vj max P 300 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G 2000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / characteristic values Durchlaspannung T = T , i = 4000A v typ. 1,61 V vj vj max T T Max. 1,7 V on-state voltage Schleusenspannung T = T V typ. 0,728 V vj vj max (TO) max. 0,765 V threshold voltage Ersatzwiderstand T = T r typ. 0,22 m vj vj max T slope resistance Max. 0,234 m A -0,2562 Durchlakennlinie 400A i 5000A T = T typ. F vj vj max B 0,000158 on-state characteristic C 0,17664 D -0,0037 v A B i C Ln(i 1) D i T T T T A -1,91423 max. B 0,00041 C 0,57615 D -0,04425 T = 25C, v = 12 V vj D I max. 350 mA Zndstrom GT gate trigger current T = 25C, v = 12 V vj D V max. 2,5 V Zndspannung GT gate trigger voltage T = T , v = 12 V I max. 20 mA Nicht zndender Steuerstrom vj vj max D GD T = T , v = 0,5 V max. 10 mA gate non-trigger current vj vj max D DRM T = T , v = 0,5 V V max. 0,4 V Nicht zndende Steuerspannung vj vj max D DRM GD gate non-trigger voltage T = 25C, v = 12 V I max. 350 mA Haltestrom vj D H holding current T = 25C, v = 12 V, R 10 I max. 3 A Einraststrom vj D GK L i = 3 A, di /dt = 6 A/s, t = 20 s latching current GM G g T = T i , i max. 600 mA Vorwrts- und Rckwrts-Sperrstrom vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM DIN IEC 60747-6 t max. 2 s Zndverzug gd T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G prepared by: TM date of publication: 2017-03-17 approved by: JP revision: 9.2 Date of Publication: 2017-03-17 Revision: 9.2 Seite/page: 2/11

Tariff Desc

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Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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