European Power- Semiconductor and Electronics Company Marketing Information T 345 N C HK red 6,3 x 0,8 70mm Cu G yellow hole for temperature measurement 3,2 x 1,5 deep 54 A VWK Aug. 1996T 345 N Elektrische Eigenschaften Electrical properties Hchstzulssige Werte Maximum rated values Periodische Vorwrts- und Rckwrts- repetitive peak forward off-state and t = -40C...t V , V 600 800 1000 1200 V vj vj max DRM RRM Spitzensperrspannung reverse voltages 1400 1600 1800 * Vorwrts-Stospitzensperrspannung non-repetitive peak forward off-state t = -40C...t V = V 600 800 1000 1200 V vj vj max DSM DRM voltage 1400 1600 1800 * Rckwrts-Stospitzensperrspannung non-repetitive peak reverse voltage t = +25C...t V = V 700 900 1100 1300 V vj vj max RSM RRM 1500 1700 1900 Durchlastrom-Grenzeffektivwert RMS on-state current I 550 A TRMSM Dauergrenzstrom average on-state current t = 85C I 345 A c TAVM Stostrom-Grenzwert surge current t = 25C, t = 10 ms I 8000 A vj p TSM t = t , t = 10 ms 6900 A vj vj max p 2 2 2 Grenzlastintegral t = 25C, t = 10 ms 320000 I t-value vj p I t A s 2 t = t , t = 10 ms 238000 vj vj max p A s Kritische Stromsteilheit critical rate of rise of on-state current (di /dt) 150 A/s v 67%, v , f = 50 Hz T cr D DRM f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G Kritische Spannungssteilheit critical rate of rise of off-state voltage t = t , v = 67% V (dv/dt) 1000 V/s vj vj max D DRM cr Charakteristische Werte Characteristic values Durchlaspannung on-state voltage t = t , i = 1000 A v max. 1,65 V vj vj max T T Schleusenspannung threshold voltage t = t V 0,85 V vj vj max T(TO) Ersatzwiderstand slope resistance t = t r 0,75 m vj vj max T Zndstrom gate trigger current t = 25 C, v = 6 V I max. 200 mA vj D GT Zndspannung gate trigger voltage t = 25 C, v = 6 V V max. 2 V vj D GT Nicht zndender Steuerstrom gate non-trigger current t = t , v = 6 V I max. 10 mA vj vj max D GD Nicht zndende Steuerspannung gate non-trigger voltage t = t , v = 0,5 V V max. 0,2 V vj vj max D DRM GD Haltestrom holding current I max. 300 mA t = 25 C, v = 6 V, R = 5,6 H vj D A Einraststrom latching current I max. 1,2 A t = 25 C,v = 6 V, R 10 vj D GK L i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom forward off-state and reverse currents t = t v = V , v = V i , i max. 80 mA vj vj max, D DRM R RRM D R Zndverzug gate controlled delay time t =25C, i = 1 A, di /dt = 1 A/s t max. 4 s vj GM G gd Freiwerdezeit circuit commutated turn-off time siehe Techn.Erl./see Techn. Inf. t typ. 250 s q Thermische Eigenschaften Thermal properties Innerer Wrmewiderstand thermal resistance, junction to case =180 el, sin R max. 0,08 C/W thJC DC max. 0,077 C/W Hchstzul.Sperrschichttemperatur max. junction temperature t 125 C vj max Betriebstemperatur operating temperature t -40...+125 C c op Lagertemperatur storage temperature t -40...+150 C stg Mechanische Eigenschaften Mechanical properties Si-Elemente mit Druckkontakt Si-pellet with pressure contact Anprekraft clamping force F 5,5 kN Gewicht weight G typ. 620 g Kriechstrecke creepage distance 12 mm Feuchteklasse humidity classification DIN 40040 C Schwingfestigkeit vibration resistance f = 50 Hz 50 m/s Mabild, anliegend outline, attached DIN 41894-224 A4 * Fr grere Stckzahlen Liefertermin erfragen / Delivery for larger quantities on request