Technische Information / technical information Netz-Thyristor T3801N Phase Control Thyristor Key Parameters enndaten V / V 3200V 3600V DRM RRM I 3830A (T =85C) TAVM C I 91000A TSM 3570A (T =55C) C v 0,826V T0 r 0,143m T R 4,5K/kW thJC Clamping Force 63 91kN Max. Diameter 151,5mm Contact Diameter 100mm Height 26mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T3801N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM T = -40C... T 3200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max Elektrische Eigenschaften 3400 V repetitive peak forward off-state and reverse voltage 3600 V ITRMSM 6020 A Durchlastrom-Grenzeffektivwert T = 85 C C maximum RMS on-state current I 3830 A Dauergrenzstrom T = 85 C TAVM C average on-state current T = 70 C 4650 A C T = 55 C C 5370 A I TSM Stostrom-Grenzwert T = 25 C, t = 10 ms 91000 A vj P surge current T = T , t = 10 ms vj vj max P 87000 A It Grenzlastintegral T = 25 C, t = 10 ms 41400 10 As vj P It-value T = T , t = 10 ms 37850 10 As vj vj max P 300 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / characteristic values Durchlaspannung T = T , i = 4000A v typ. 1,3 V vj vj max T T Max. 1,4 V on-state voltage Schleusenspannung T = T V typ. 0,772 V vj vj max (TO) max. 0,826 V threshold voltage Ersatzwiderstand T = T r typ. 0,131 m vj vj max T Max. 0,143 m slope resistance A 0,69572 Durchlakennlinie 400A i 5000A T = T typ. F vj vj max B 0,0000003 on-state characteristic C -0,03974 D 0,0147 A 0,7485 max. B 0,000009 v A B i C Ln( i 1) D i T T T T C -0,04072 D 0,01505 T = 25C, v = 12 V Zndstrom vj D IGT max. 350 mA gate trigger current T = 25C, v = 12 V V max. 2,5 V Zndspannung vj D GT gate trigger voltage T = T , v = 12 V I max. 20 mA Nicht zndender Steuerstrom vj vj max D GD T = T , v = 0,5 V max. 10 mA gate non-trigger current vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,4 V vj vj max D DRM GD gate non-trigger voltage Haltestrom Tvj = 25C, vD = 12 V IH max. 350 mA holding current T = 25C, v = 12 V, R 10 I max. 3 A Einraststrom vj D GK L i = 3 A, di /dt = 6 A/s, t = 20 s latching current GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 600 mA vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM Zndverzug DIN IEC 60747-6 tgd max. 2 s T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G prepared by: TM date of publication: 2011-05-02 approved by: JP revision: 6.0 Date of Publication: 2011-05-02 Revision: 6.0 Seite/page: 2/11