Datenblatt / Data sheet N Netz-Thyristor T430N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM enndaten 1400 1800 V repetitive peak forward off-state and reverse voltages 1200 1600 V Vorwrts-Stossspitzensperrspannung T = -40C... T V Elektrische Eigenschaften vj vj max DSM 1400 1800 V non-repetitive peak forward off-state voltage 1300 1700 V Rckwrts-Stossspitzensperrspannung T = +25C... T V vj vj max RSM 1500 1900 V non-repetitive peak reverse voltage 700 A Durchlassstrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 433 A Dauergrenzstrom T = 85 C I C TAVM average on-state current 620 A Dauergrenzstrom T = 55 C, = 180sin, t = 10 ms I C P TAVM average on-state current 970 A Durchlastrom-Effektivwert I TRMS RMS on-state current 5200 A Stossstrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 4600 A T = T , t = 10 ms surge current vj vj max P 135 10 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 106 10 As It-value T = T , t = 10 ms vj vj max P DIN IEC 60747-6 150 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / Characteristic values max. 2,07 V Durchlassspannung T = T , i = 1200 A v vj vj max T T max. 1,10 V on-state voltage T = T , i = 200 A vj vj max T 0,85V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,900 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie 100 A i 2200 A T = T A= 1,042E+00 T vj vj max on-state characteristic B= 4,125E-04 C= -1,077E-01 v = A + B i + C ln(i + 1) + D i T T T T D= 3,721E-02 Zndstrom T = 25 C, v = 12V I max. 200mA vj D GT gate trigger current Zndspannung T = 25 C, v = 12V V max. 2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V I max. 300mA vj D H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1200mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 3s gd gate controlled delay time T = 25 C, i = 1 A, di /dt = 1 A/s vj GM G prepared by: H.Sandmann date of publication: 2009-12-01 approved by: M.Leifeld revision: 3.1 IFBIP D AEC / 2009-12-01, H.Sandmann A 28/09 Seite/page 1/10 Datenblatt / Data sheet N Netz-Thyristor T430N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values typ. 250s Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften Thermische Eigenschaften / Thermal properties Khlflche / cooling surface R Innerer Wrmewiderstand thJC beidseitig / two-sided, = 180sin max. 0,051 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,046 C/W Anode / anode, = 180sin max. 0,084 C/W Anode / anode, DC max. 0,079 C/W Kathode / cathode, = 180sin max. 0,114 C/W Kathode / cathode, DC max. 0,109 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCH beidseitig / two-sides max. 0,015 C/W thermal resistance, case to heatsink einseitig / single-sides max. 0,030 C/W Hchstzulssige Sperrschichttemperatur T 125C vj max maximum junction temperature Betriebstemperatur T -40...+125C c op operating temperature Lagertemperatur T -40...+150C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 4...8kN clamping force Steueranschlsse Gate (flat) A 2,8x0,5 mm control terminals Gate (round, based on AMP 60598) 1,5 mm Kathode / cathode A 4,8x0,5 mm Gewicht G typ. 70g weight Kriechstrecke 6mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance IFBIP D AEC / 2009-12-01, H.Sandmann A 28/09 Seite/page 2/10