X-On Electronics has gained recognition as a prominent supplier of T470N14TOF SCR Modules across the USA, India, Europe, Australia, and various other global locations. T470N14TOF SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

T470N14TOF Infineon

T470N14TOF electronic component of Infineon
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Part No.T470N14TOF
Manufacturer: Infineon
Category: SCR Modules
Description: SCR Modules Phse Cntrl Thyristrs 470A 1400V
Datasheet: T470N14TOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the T470N14TOF from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T470N14TOF and other electronic components in the SCR Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor T470N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM enndaten 1400 V repetitive peak forward off-state and reverse voltages 1600 V Elektrische Eigenschaften 1200 V Vorwrts-Stossspitzensperrspannung T = -40C... T V vj vj max DSM 1400 V non-repetitive peak forward off-state voltage 1600 V 1300 V Rckwrts-Stossspitzensperrspannung T = +25C... T V vj vj max RSM 1500 V non-repetitive peak reverse voltage 1700 V 800 A Durchlassstrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 470 A Dauergrenzstrom T = 85 C I C TAVM average on-state current 670 A Dauergrenzstrom T = 55 C, = 180sin, t = 10 ms I C P TAVM average on-state current 1060 A Durchlastrom-Effektivwert I TRMS RMS on-state current 7100 A Stossstrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 6350 A T = T , t = 10 ms surge current vj vj max P 252 10 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 202 10 As It-value T = T , t = 10 ms vj vj max P DIN IEC 60747-6 150 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / Characteristic values max. 1,85 V Durchlassspannung T = T , i = 1200 A v vj vj max T T max. 1,10 V on-state voltage T = T , i = 300 A vj vj max T 0,80V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,75 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie 100 A i 2400 A T = T A= 9,865E-01 T vj vj max on-state characteristic B= 2,622E-04 C= -1,155E-01 v = A + B i + C ln(i + 1) + D i T T T T D= 3,953E-02 Zndstrom T = 25 C, v = 12V I max. 200mA vj D GT gate trigger current Zndspannung T = 25 C, v = 12V V max. 2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V I max. 300mA vj D H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1200mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 3s gd gate controlled delay time T = 25 C, i = 1 A, di /dt = 1 A/s vj GM G prepared by: H.Sandmann date of publication: 2009-12-16 approved by: M.Leifeld revision: 3.1 IFBIP D AEC / 2009-12-01, H.Sandmann A 29/09 Seite/page 1/10 Datenblatt / Data sheet N Netz-Thyristor T470N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values typ. 250s Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften Thermische Eigenschaften / Thermal properties Khlflche / cooling surface R Innerer Wrmewiderstand thJC beidseitig / two-sided, = 180sin max. 0,051 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,046 C/W Anode / anode, = 180sin max. 0,084 C/W Anode / anode, DC max. 0,079 C/W Kathode / cathode, = 180sin max. 0,114 C/W Kathode / cathode, DC max. 0,109 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCH beidseitig / two-sides max. 0,015 C/W thermal resistance, case to heatsink einseitig / single-sides max. 0,030 C/W Hchstzulssige Sperrschichttemperatur T 125C vj max maximum junction temperature Betriebstemperatur T -40...+125C c op operating temperature Lagertemperatur T -40...+150C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 4...8kN clamping force Steueranschlsse Gate (flat) A 2,8x0,5 mm control terminals Gate (round, based on AMP 60598) 1,5 mm Kathode / cathode A 4,8x0,5 mm Gewicht G typ. 70g weight Kriechstrecke 6mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance IFBIP D AEC / 2009-12-01, H.Sandmann A 29/09 Seite/page 2/10

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