Technische Information / technical information Netz-Thyristor T501N Phase Control Thyristor Key Parameters enndaten V / V 6000V 7000V DRM RRM I 640A (T =85C) TAVM C I 13500A TSM 3570A (T =55C) C v 1,3V T0 r 1,35m T R 17,0K/kW thJC Clamping Force 15 24kN Max. Diameter 76mm Contact Diameter 50mm Height 26mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T501N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM T = -40C... T 6000 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max Elektrische Eigenschaften 6500 V repetitive peak forward off-state and reverse voltage 7000 V I 1000 A Durchlastrom-Grenzeffektivwert T = 85 C TRMSM C maximum RMS on-state current I 640 A Dauergrenzstrom T = 85 C TAVM C average on-state current T = 70 C 770 A C T = 55 C C 890 A I TSM Stostrom-Grenzwert T = 25 C, t = 10 ms 13500 A vj P surge current T = T , t = 10 ms vj vj max P 13000 A It Grenzlastintegral T = 25 C, t = 10 ms 910 10 As vj P It-value T = T , t = 10 ms 845 10 As vj vj max P 300 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G 2000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / characteristic values Durchlaspannung T = T , i = 1000A v typ. 2,55 V vj vj max T T Max. 2,65 V on-state voltage Schleusenspannung T = T V typ. 1,25 V vj vj max (TO) max. 1,3 V threshold voltage Ersatzwiderstand T = T r typ. 1,3 m vj vj max T Max. 1,35 m slope resistance A -0,0927 Durchlakennlinie 100A i 1200A T = T typ. F vj vj max B 0,000967 on-state characteristic C 0,1815 D 0,01334 A -0,0921 v A B i C Ln( i 1) D i max. T T T T B 0,001 C 0,1841 D 0,0149 T = 25C, v = 12 V Zndstrom vj D IGT max. 350 mA gate trigger current T = 25C, v = 12 V Zndspannung vj D V max. 2,5 V GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12 V I max. 20 mA vj vj max D GD T = T , v = 0,5 V max. 10 mA gate non-trigger current vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,4 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12 V I max. 350 mA vj D H holding current Einraststrom T = 25C, v = 12 V, R 10 I max. 3 A vj D GK L i = 3 A, di /dt = 6 A/s, t = 20 s latching current GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 200 mA vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 2 s gd T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G prepared by: TM date of publication: 2011-05-02 approved by: JP revision: 11.0 Date of Publication: 2011-05-02 Revision: 11.0 Seite/page: 2/11