X-On Electronics has gained recognition as a prominent supplier of T570N65TOF SCR Modules across the USA, India, Europe, Australia, and various other global locations. T570N65TOF SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

T570N65TOF Infineon

T570N65TOF electronic component of Infineon
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See Product Specifications
Part No.T570N65TOF
Manufacturer: Infineon
Category: SCR Modules
Description: SCR Modules HIGH POWER THYR / DIO
Datasheet: T570N65TOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 1045.902 ea
Line Total: USD 4183.61 
Availability - 0
MOQ: 4  Multiples: 4
Pack Size: 4
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 4
Multiples : 4
4 : USD 1045.902

   
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We are delighted to provide the T570N65TOF from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T570N65TOF and other electronic components in the SCR Modules category and beyond.

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Technische Information / technical information Netz-Thyristor T570N Phase Control Thyristor Key Parameters V / V 6500 V DRM RRM I 540 A (T =85C) TAVM C I 10500 A TSM 3570A (T =55C) C V 1,35 V T0 r 1,4 m T R 21 K/kW thJC Clamping Force 1323 kN Max. Diameter 76 mm Contact Diameter 50 mm Height 26 mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T570N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = 25C... T 6500 V vj vj max repetitive peak forward off-state and reverse voltage Elektrische Eigenschaften I Durchlastrom-Grenzeffektivwert T = 85 C TRMSM 850 A C maximum RMS on-state current I 540 A Dauergrenzstrom T = 85 C TAVM C 660 A average on-state current T = 70 C C TC = 55 C 760 A I TSM Stostrom-Grenzwert T = 25 C, t = 10 ms 10500 A vj P surge current T = T , t = 10 ms vj vj max P 9400 A It Grenzlastintegral T = 25 C, t = 10 ms 551,25 10 As vj P It-value T = T , t = 10 ms 441,8 10 As vj vj max P 150 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / characteristic values max. 2,75 V Durchlaspannung T = T , i = 1000A v vj vj max T T on-state voltage max. 1,35 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 1,4 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlakennlinie 100A i 2700A T = T max. A -0,3296 T vj vj max on-state characteristic B 0,001724 v A B i C Ln(i 1) D i C 0,4376 T T T T D -0,05275 T = 25C, v = 12 V Zndstrom vj D I max. 350 mA GT gate trigger current T = 25C, v = 12 V vj D V max. 2,5 V Zndspannung GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12 V I max. 20 mA vj vj max D GD gate non-trigger current Tvj = Tvj max , vD = 0,5 VDRM max. 10 mA T = T , v = 0,5 V V max. 0,4 V Nicht zndende Steuerspannung vj vj max D DRM GD gate non-trigger voltage T = 25C, v = 12 V I max. 350 mA Haltestrom vj D H holding current T = 25C, v = 12 V, R 10 I max. 3 A Einraststrom vj D GK L i = 3 A, di /dt = 6 A/s, t = 20 s latching current GM G g T = T i , i max. 400 mA Vorwrts- und Rckwrts-Sperrstrom vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM DIN IEC 60747-6 t max. 2,5 s Zndverzug gd T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G date of publication: 2014-06-18 prepared by: TM revision: approved by: JP 2.3 Date of Publication: 2014-06-18 Revision: 2.3 Seite/page: 2/11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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