X-On Electronics has gained recognition as a prominent supplier of T880N16TOF SCRs across the USA, India, Europe, Australia, and various other global locations. T880N16TOF SCRs are a product manufactured by Infineon. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

T880N16TOF Infineon

T880N16TOF electronic component of Infineon
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See Product Specifications
Part No. T880N16TOF
Manufacturer: Infineon
Category: SCRs
Description: Infineon Technologies SCRs PCT 1600V 880A
Datasheet: T880N16TOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 164.043 ea
Line Total: USD 164.04 
Availability - 16
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 164.043
12 : USD 164.043

   
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We are delighted to provide the T880N16TOF from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T880N16TOF and other electronic components in the SCRs category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor T880N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM enndaten 1400 1800 V repetitive peak forward off-state and reverse voltages 1200 1600 V Vorwrts-Stossspitzensperrspannung Elektrische Eigenschaften T = -40C... T V vj vj max DSM 1400 1800 V non-repetitive peak forward off-state voltage 1300 1700 V Rckwrts-Stossspitzensperrspannung T = +25C... T V vj vj max RSM 1500 1900 V non-repetitive peak reverse voltage Durchlassstrom-Grenzeffektivwert I 1750 A TRMSM maximum RMS on-state current 880 A Dauergrenzstrom T = 85 C I C TAVM average on-state current 1280 A Dauergrenzstrom T = 55 C, = 180sin, t = 10 ms I C P TAVM average on-state current 2020 A Durchlastrom-Effektivwert I TRMS RMS on-state current Stossstrom-Grenzwert T = 25 C C, t = 10 ms I 17500 A vj P TSM 15500 A surge current T = T , t = 10 ms vj vj max P 1530 10 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 1200 10 As It-value T = T , t = 10 ms vj vj max P DIN IEC 60747-6 200 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / Characteristic values max. 1,95 V Durchlassspannung T = T , i = 3,6 kA v vj vj max T T max. 1,17 V on-state voltage T = T , i = 1 kA vj vj max T Schleusenspannung T = T V 0,85V vj vj max (TO) threshold voltage 0,27 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie 200 A i 4400 A T = T A= 1,046E+00 T vj vj max on-state characteristic B= 2,313E-04 C= -5,398E-02 v = A + B i + C ln(i + 1) + D i T T T T D= 8,494E-03 Zndstrom T = 25 C, v = 12V I max. 250mA vj D GT gate trigger current Zndspannung T = 25 C, v = 12V V max. 2,2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V I max. 300mA vj D H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 100mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 4s gd gate controlled delay time T = 25 C, i = 1 A, di /dt = 1 A/s vj GM G prepared by: H.Sandmann date of publication: 2008-09-17 approved by: M.Leifeld revision: 1.0 IFBIP D AEC, 2008-09-17, H.Sandmann A 51/08 Seite/page 1/10 Datenblatt / Data sheet N Netz-Thyristor T880N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t typ. 250s vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand Khlflche / cooling surface R thJC beidseitig / two-sided, = 180sin max. 0,0320 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,0300 C/W Anode / anode, = 180sin max. 0,0537 C/W Anode / anode, DC max. 0,0511 C/W Kathode / cathode, = 180sin max. 0,0816 C/W Kathode / cathode, DC max. 0,0732 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCH beidseitig / two-sides max. 0,005 C/W thermal resistance, case to heatsink max. 0,010 einseitig / single-sides C/W 125C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+125C c op operating temperature Lagertemperatur T -40...+150C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 10,521kN clamping force Steueranschlsse Gate (flat) A 2,8x0,5 mm control terminals Gate (round, based on AMP 60598) 1,5 mm Kathode / cathode A 4,8x0,5 mm Gewicht G typ. 300g weight Kriechstrecke 20mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance IFBIP D AEC, 2008-09-17, H.Sandmann A 51/08 Seite/page 2/10

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