Technische Information / technical information Netz-Thyristor T901N Phase Control Thyristor Key Parameters enndaten V / V 3200V 3600V DRM RRM I 940A (T =85C) TAVM C I 19000A TSM 3570A (T =55C) C v 1,16V T0 r 0,494m T R 17,0K/kW thJC Clamping Force 15 24kN Max. Diameter 76mm Contact Diameter 50mm Height 26mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T901N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM 3200 V T = -40C... T Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max 3400 V Elektrische Eigenschaften repetitive peak forward off-state and reverse voltage 3600 V I TRMSM 1480 A Durchlastrom-Grenzeffektivwert T = 85 C C maximum RMS on-state current I 940 A Dauergrenzstrom T = 85 C TAVM C 1160 A average on-state current T = 70 C C TC = 55 C 1350 A I TSM Stostrom-Grenzwert T = 25 C, t = 10 ms 19000 A vj P surge current T = T , t = 10 ms vj vj max P 17000 A It Grenzlastintegral T = 25 C, t = 10 ms 1805 10 As vj P It-value T = T , t = 10 ms 1445 10 As vj vj max P 300 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / characteristic values Durchlaspannung T = T , i = 1200A v typ. 1,5 V vj vj max T T Max. 1,75 V on-state voltage Schleusenspannung T = T V typ. 1 V vj vj max (TO) max. 1,16 V threshold voltage Ersatzwiderstand T = T r typ. 0,413 m vj vj max T Max. 0,494 m slope resistance A -0,0764 Durchlakennlinie 100A i 1500A T = T typ. F vj vj max B 0,00032 on-state characteristic C 0,165 D 0,000816 A -0,0802 max. B 0,00045 C 0,2085 v A B i C Ln( i 1) D i T T T T D -0,00524 T = 25C, v = 12 V vj D I max. 350 mA Zndstrom GT gate trigger current T = 25C, v = 12 V vj D V max. 2,5 V Zndspannung GT gate trigger voltage T = T , v = 12 V I max. 20 mA Nicht zndender Steuerstrom vj vj max D GD T = T , v = 0,5 V max. 10 mA gate non-trigger current vj vj max D DRM T = T , v = 0,5 V V max. 0,4 V Nicht zndende Steuerspannung vj vj max D DRM GD gate non-trigger voltage T = 25C, v = 12 V I max. 300 mA Haltestrom vj D H holding current T = 25C, v = 12 V, R 10 I max. 3 A Einraststrom vj D GK L i = 3 A, di /dt = 6 A/s, t = 20 s latching current GM G g T = T i , i max. 200 mA Vorwrts- und Rckwrts-Sperrstrom vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM DIN IEC 60747-6 t max. 2 s Zndverzug gd T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G prepared by: TM date of publication: 2011-05-02 approved by: JP revision: 7.0 Date of Publication: 2011-05-02 Revision: 7.0 Seite/page: 2/11