X-On Electronics has gained recognition as a prominent supplier of T940N16TOF SCR Modules across the USA, India, Europe, Australia, and various other global locations. T940N16TOF SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

T940N16TOF Infineon

T940N16TOF electronic component of Infineon
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See Product Specifications
Part No.T940N16TOF
Manufacturer: Infineon
Category: SCR Modules
Description: SCR Modules Phse Cntrl Thyristrs 940A 1600V
Datasheet: T940N16TOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 171.1545 ea
Line Total: USD 1540.39 
Availability - 0
MOQ: 9  Multiples: 9
Pack Size: 9
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 9
Multiples : 9
9 : USD 171.1545
27 : USD 170.1885
54 : USD 169.349
108 : USD 168.6015
252 : USD 168.452
504 : USD 168.3025
1008 : USD 168.153
2502 : USD 168.0035

   
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We are delighted to provide the T940N16TOF from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T940N16TOF and other electronic components in the SCR Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor T940N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values enndaten = -40C... T V ,V 1200 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T vj vj max DRM RRM 1400 1800 V repetitive peak forward off-state and reverse voltages Elektrische Eigenschaften 1200 1600 V Vorwrts-Stossspitzensperrspannung T = -40C... T V vj vj max DSM 1400 1800 V non-repetitive peak forward off-state voltage 1300 1700 V Rckwrts-Stossspitzensperrspannung T = +25C... T V vj vj max RSM 1500 1900 V non-repetitive peak reverse voltage 1759 A Durchlassstrom-Grenzeffektivwert I TRMSM maximum RMS on-state current Dauergrenzstrom T = 85 C I 959 A C TAVM average on-state current 1400 A Dauergrenzstrom T = 55 C, = 180sin, t = 10 ms I C P TAVM average on-state current 2200 A Durchlastrom-Effektivwert I TRMS RMS on-state current Stossstrom-Grenzwert T = 25 C, t = 10 ms I 17500 A vj P TSM 15500 A T = T , t = 10 ms surge current vj vj max P 1530 10 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 1200 10 As It-value T = T , t = 10 ms vj vj max P DIN IEC 60747-6 200 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V /dt) 1000 V/s (dv vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / Characteristic values max. 1,95 V Durchlassspannung T = T , i = 3,6 kA v vj vj max T T max. 1,17 V on-state voltage T = T , i = 1 kA vj vj max T 0,85V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,27 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie 200 A i 4700 A T = T A= 1,046E+00 T vj vj max on-state characteristic B= 2,313E-04 C= -5,398E-02 v = A + B i + C ln(i + 1) + D i T T T T D= 8,494E-03 Zndstrom T = 25 C, v = 12V I max. 250mA vj D GT gate trigger current Zndspannung T = 25 C, v = 12V V max. 2,2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V I max. 300mA vj D H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 100mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 4s gd gate controlled delay time T = 25 C, i = 1 A, di /dt = 1 A/s vj GM G prepared by: H.Sandmann date of publication: 2010-09-02 approved by: M.Leifeld revision: 3.2 IFBIP D AEC / 2010-09-02, H.Sandmann A 28/10 Seite/page 1/10 Datenblatt / Data sheet N Netz-Thyristor T940N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values typ. 250s Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften Thermische Eigenschaften / Thermal properties Khlflche / cooling surface R Innerer Wrmewiderstand thJC beidseitig / two-sided, = 180sin max. 0,028 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,026 C/W Anode / anode, = 180sin max. 0,050 C/W Anode / anode, DC max. 0,048 C/W Kathode / cathode, = 180sin max. 0,058 C/W Kathode / cathode, DC max. 0,056 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCH beidseitig / two-sides max. 0,005 C/W thermal resistance, case to heatsink einseitig / single-sides max. 0,010 C/W Hchstzulssige Sperrschichttemperatur T 125C vj max maximum junction temperature Betriebstemperatur T -40...+125C c op operating temperature Lagertemperatur T -40...+150C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 10,5..21kN clamping force Steueranschlsse Gate (flat) A 2,8x0,5 mm control terminals Gate (round, based on AMP 60598) 1,5 mm Kathode / cathode A 4,8x0,5 mm Gewicht G typ. 170g weight Kriechstrecke 5mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance IFBIP D AEC / 2010-09-02, H.Sandmann A 28/10 Seite/page 2/10

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