X-On Electronics has gained recognition as a prominent supplier of TD330N16KOF Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TD330N16KOF Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TD330N16KOF Infineon

TD330N16KOF electronic component of Infineon
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Part No.TD330N16KOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1.6KV 9.1KA 5-Pin
Datasheet: TD330N16KOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 194.711 ea
Line Total: USD 194.71 
Availability - 18
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
18
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 194.711
12 : USD 193.622

   
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RoHS - XON
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Maximum Operating Temperature
Packaging
Current Rating
Off-State Leakage Current Vdrm Idrm
On-State Voltage
Rated Repetitive Off-State Voltage Vdrm
Brand
Circuit Type
Gate Trigger Current - Igt
Gate Trigger Voltage - Vgt
Holding Current Ih Max
Non Repetitive On-State Current
On-State Rms Current - It Rms
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We are delighted to provide the TD330N16KOF from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TD330N16KOF and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor-Modul TT330N Phase Control Thyristor Module TT330N TD330N Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 V non-repetitive peak reverse voltage 520 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 330 A Dauergrenzstrom T = 85C I C TAVM average on-state current 9100 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 8000 A surge current T = T , t = 10 ms vj vj max P 414000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 320000 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 250 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter C th 1000 V/s 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values 1,44 V Durchlaspannung T = T , i = 800 A v max. vj vj max T T on-state voltage 0,80V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,60 m Ersatzwiderstand T = T r vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 200 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 300mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 1200mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 70mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3s gd gate controlled delay time T = 25 C,i = 1 A, di /dt = 1 A/s vj GM G C.Drilling date of publication: 19.01.06 prepared by: revision: 2 approved by: M. Leifeld BIP PPE4 19.01.2006 C. Drilling A 01/06 Seite/page 1/13 Datenblatt / Data sheet N Netz-Thyristor-Modul TT330N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 250 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 3,0 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,6 Thermische Eigenschaften / Thermal properties Thermische Eigenschaften Innerer Wrmewiderstand pro Modul / per Module, = 180 sin R max. 0,059 C/W thJC pro Zweig / per arm, = 180 sin max. 0,117 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,056 C/W pro Zweig / per arm, DC max. 0,111 C/W pro Modul / per Module max. 0,02 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,04 C/W thermal resistance, case to heatsink 135 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+135C c op operating temp erature Lagertemperatur T -40...+135 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Mechanische Eigenschaften Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 5 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 12 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 800g weight Kriechstrecke 17mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP PPE4 19.01.2006 C. Drilling A 01/06 Seite/page 2/13

Tariff Desc

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CYPRESS SEMI
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Infineon (IRF)
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International Rectifier HiRel Products
INTL RECTIFIER
IR
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