Technische Information / technical information Netz-Thyristor-Modul TT520N22KOF Phase Control Thyristor Module Key Parameters V / V 2200 V DRM RRM I 520 A (T =85 C) TAVM C I 18000 A TSM V 0,85 V T0 r 0,35 m T R 0,055 K/W thJC Base plate 60 mm For type designation please refer to actual short form catalog Technische Information / technical information Net z-Thyristor-Modul TT520N22KOF Phase Control Thyristor Module TT520N22KOF... TD520N22KOF... TD520N22KOF TIM Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 2200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 2200 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 2300 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage 1050 Durchlastrom-Grenzeffektivwert I A TRMSM maximum RMS on-state current Dauergrenzstrom I 520 A T = 85C TAVM C average on-state current 18000 Stostrom-Grenzwert T = 25C, t = 10ms I A vj P TSM 14500 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 1620000 As vj P It-value T = T , t = 10ms 1051250 As vj vj max P 200 Kritische Stromsteilheit DIN IEC 747-6 (di /dt) A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F 1000 V/s Charakteristische Werte / Characteristic values max. 1,5 V Durchlaspannung T = T , i = 1500 A v vj vj max T T on-state voltage max. 0,85 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,35 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie i 3000 A T A = T + A * vj A on-state characteristic A= -2,816E-03 8,487E-01 B = T + B * vj B B= 6,470E-07 1,179E-04 C = T + C * vj C v A(T ) B(T ) i C(T ) ln(i 1) D(T ) i C= T 2,964E-04 9,707E-04 T vj vj T vj T vj D = T + D * vj D D= -6,219E-06 6,831E-03 max. Zndstrom T = 25C, v = 12V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2,2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 100 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: AG date of publication: 2019-08-16 approved by: ML revision: 3.3 Date of Publication 2019-08-16 Revision: 3.3 Seite/page 2/11