TD60N16SOF Infineon

Technische Information / technical information Netz-Thyristor-Modul TT60N16SOF Phase Control Thyristor Module Key Parameters V / V 1600 V DRM RRM I 55 A (T =85 C) TAVM C I 1500 A TSM 3570A (T =55C) C V 1,0 V T0 r 4,8 m T R 0,47 K/W thJC Base plate 20 mm Weight 75 g For type designation please refer to actual short form catalog Technische Information / technical information Net z-Thyristor-Modul TT60N16SOF Phase Control Thyristor Module TT60N16SOF TT60N16SOFB01 TD60N16SOF Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 90 A TRMSM maximum RMS on-state current Dauergrenzstrom I 55 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 1500 A vj P TSM 1200 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 11250 As vj P It-value T = T , t = 10ms 7200 As vj vj max P Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) 140 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter C th 1000 V/s 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,75 V Durchlaspannung T = 25C i = 180 A v vj T T on-state voltage max. 1 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 4,8 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 100 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2,5 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 4 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 2 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 250 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 600 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 20 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 1 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G AG date of publication: 2017-08-23 prepared by: revision: 3.4 approved by: MS Date of Publication 2017-08-23 Revision: 3.4 Seite/page: 2/11