X-On Electronics has gained recognition as a prominent supplier of TT260N22KOF SCR Modules across the USA, India, Europe, Australia, and various other global locations. TT260N22KOF SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

TT260N22KOF Infineon

TT260N22KOF electronic component of Infineon
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Part No.TT260N22KOF
Manufacturer: Infineon
Category: SCR Modules
Description: SCR Modules THYR / DIODE MODULE DK
Datasheet: TT260N22KOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 190.157 ea
Line Total: USD 190.16 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 190.157
12 : USD 190.146

   
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We are delighted to provide the TT260N22KOF from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT260N22KOF and other electronic components in the SCR Modules category and beyond.

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Technische Information / technical information Netz-Thyristor-Modul TT260N22KOF Phase Control Thyristor Module Key Parameters V / V 2200 V DRM RRM I 260 A (T = 85 C) TAVM C I 8000 A TSM 3570A (T =55C) C v 0,85 V T0 r 0,64 m T R 0,1130 K/W thJC Base plate width 50 mm Weight 800 g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT260N22KOF Phase Control Thyristor Module TT260N22KOF... TD260N22KOF... Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1800 2200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1800 2200 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1900 2300 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 450 A TRMSM maximum RMS on-state current Dauergrenzstrom T = 85C I 260 A C TAVM 287 A average on-state current T = 80C C Stostrom-Grenzwert T = 25 C, t = 10 ms I 9.500 A vj P TSM 8.000 A surge current T = T , t = 10 ms vj vj max P Grenzlastintegral T = 25 C, t = 10 ms It 451.250 As vj P 320.000 As It-value T = T , t = 10 ms vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 250 A/s T cr f = 50 Hz, iGM = 1 A, diG/dt = 1 A/s critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,45 V Durchlaspannung T = T , i = 800 A v vj vj max T T on-state voltage max. 0,85 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,64 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12 V I 200 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12 V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12 V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12 V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12 V, R 10 I max. 1200 mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25 C,i = 1 A, di /dt = 1 A/s vj GM G prepared by: CD date of publication: 01.08.13 approved by: ML revision: 1 Date of Publication 2013-08-01 Revision: 3.1 Seite/page 2/11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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