TT570N16KOFHPSA2 Infineon

Technische Information / technical information Netz-Thyristor-Modul TT570N Phase Control Thyristor Module Key Parameters V / V 1600 V DRM RRM I 600 A (T =85 C) TAVM C I 17000 A TSM V 0,8 V T0 r 0,23 m T R 0,058 K/W thJC Base plate 60 mm Weight 1450 g For type designation please refer to actual short form catalog Technische Information / technical information Net z-Thyristor-Modul TT570N Phase Control Thyristor Module TT570N TD570N Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 900 A TRMSM maximum RMS on-state current Dauergrenzstrom I 600 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 17000 A vj P TSM surge current T = T , t = 10ms 14000 A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 1445000 As vj P 980000 It-value T = T , t = 10ms As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 200 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 1500 A v max. 1,27 V vj vj max T T on-state voltage Schleusenspannung T = T V max. 0,8 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r max. 0,23 m vj vj max T slope resistance Zndstrom T = 25C, v = 12V I max. 250 mA vj D GT gate trigger current Zndspannung T = 25C, v = 12V V max. 2,2 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom Tvj = 25C, vD = 12V, RA = 1 IH max. 300 mA holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500 mA vj D GK L latching current iGM = 1A, diG/dt = 1A/s, tg = 20s Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 140 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 tgd max. 4 s gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: HR date of publication: 2014-04-23 approved by: ML revision: 3.1 Seite/page Date of Publication 2014-04-23 Revision: 3.1 2/11