Technische Information / technical information Net z-Thyristor-Modul TT600N16KOF Phase Control Thyristor Module Key Parameters VDRM / VRRM 1600V I 600A (T =85C) TAVM C I 21000A TSM VT0 0,8V r 0,23m T R 0,055K/W thJC Base plate 60mm For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT600N16KOF Phase Control Thyristor Module TT600N16KOF... TD600N16KOF... TT600N16KOF TIM TD600N16KOF TIM Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung Tvj = +25C... Tvj max VRSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 1050 A TRMSM maximum RMS on-state current 600 Dauergrenzstrom T = 85C ITAVM A C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 21000 A vj P TSM surge current T = T , t = 10ms 17500 A vj vj max P 2205000 Grenzlastintegral T = 25C, t = 10ms It As vj P 1531250 It-value T = T , t = 10ms As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 200 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter C V/s Charakteristische Werte / Characteristic values max. 1,27 V Durchlaspannung T = T , i = 1500 A v vj vj max T T on-state voltage max. 0,8 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,23 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie i 6000 A T A = T + A * vj A -3,305E-03 8,309E-01 on-state characteristic A= B = T + B * vj B 5,582E-07 8,826E-05 B= v A(T ) B(T ) i C(T ) ln(i 1) D(T ) i T T vj vj T vj T vj C = T + C * vj C 5,033E-04 -8,143E-03 C= D = T + D * vj D -5,552E-05 8,169E-03 D= max. Zndstrom T = 25C, v = 12V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 100 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: AG date of publication: 2018-09-13 approved by: MS revision: 3.4 Date of Publication 2018-09-13 Revision: 3.4 Seite/page 2/11