Technische Information / technical information Net z-Thyristor-Modul TT820N16KOF Phase Control Thyristor Module Key Parameters VDRM / VRRM 1600V I 820A (T =85C) TAVM C I 24800A TSM VT0 0,8V rT 0,23m R 0,045K/W thJC Base plate 60mm For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT820N16KOF Phase Control Thyristor Module TT820N16KOF TD820N16KOF TT820N16KOF TIM TD820N16KOF TIM Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 1050 A TRMSM maximum RMS on-state current Dauergrenzstrom I 820 A TC = 85C TAVM average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 24800 A vj P TSM 20100 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 3075200 As vj P It-value T = T , t = 10ms 2020050 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 200 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr critical rate of rise of off-state voltage Charakteristische Werte / Characteristic values max. 1,27 V Durchlaspannung T = T , i = 1500 A v vj vj max T T on-state voltage max. 0,8 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,23 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie i 6000 A T A = T + A * vj A on-state characteristic -3,305E-03 8,309E-01 A= B = T + B * vj B B= 5,582E-07 8,826E-05 C = T + C * vj C v A(T ) B(T ) i C(T ) ln (i 1) D(T ) i C= 5,033E-04 -8,143E-03 T T vj vj T vj T vj D = T + D * vj D D= -5,552E-05 8,169E-03 max. Zndstrom T = 25C, v = 12V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 120 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: AG date of publication: 2021-03-04 approved by: ML Revision: 3.3 Date of Publication 2021-03-04 Revision: 3.3 Seite/page 2/11