Technische Information / technical information Netz-Thyristor-Modul TZ860N16KOF Phase Control Thyristor Module Key Parameters V / V 1600 V DRM RRM I 860 A (T =85C) TAVM C I 46000 A TSM 3570A (T =55C) C v 0,8 V T0 r 0,145 m T R 0,0405 K/W thJC Baseplate 70 mm Weight 1950 g For type designation please refer to actual shortform catalog Technische Information / technical information Net z-Thyristor-Modul TZ860N16KOF Phase Control Thyristor Module TZ860N16KOF Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 1500 A TRMSM maximum RMS on-state current Dauergrenzstrom I 860 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 46.000 A vj P TSM 40.000 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 10.580.000 As vj P It-value T = T , t = 10ms 8.000.000 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 200 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 1000 V/s 6.Kennbuchstabe / 6 letter C Charakteristische Werte / Characteristic values max. 1,38 V Durchlaspannung T = T , i = 3000 A v vj vj max T T on-state voltage max. 0,8 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,145 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 500 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 2500 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 150 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G HR date of publication: 2014-04-11 prepared by: revision: 3.1 approved by: ML Date of Publication 2014-04-11 Revision: 3.1 Seite/page 2/11