IS37SML01G1-LLI ISSI

IS37SML01G1 IS38SML01G1 1Gb SLC-1b ECC 3.3V SERIAL NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE DATA SHEET IS37/38SML01G1 1Gb 3.3V SPI-NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE with 1b ECC FEATURES Flexible & Efficient Memory Efficient Read and Program modes Architecture - Support SPI-Mode 0 and SPI-Mode 3 (1) - Bus Width: x1, x2 , x4 - Organization: - Command Register Operation - Memory Cell Array: (128M + 4M) x 8bit - NOP: 4 cycles - Data Register: (2K + 64) x 8bit - OTP Operation - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Bad-Block-Protect - Memory Cell: 1bit/Memory Cell - Boot Read Highest performance Advanced Security Protection - Frequency : 104MHz - Hardware Data Protection - Program/Erase Lockout during Power - Internal ECC Implementation: 1-bit ECC Transitions - Read Performance - Read from Cell to Register with Internal ECC: 100us Industry Standard Pin-out & Packages - M =16-pin SOIC 300mil - Write Performance - Program time: 400us - typical - L = 8-contact WSON 8x6mm - Block Erase time: 4ms typical Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 10 mA Active Read Current - 8 A Standby Current - Temp Grades: Note: 1. X2 Program Operation is not defined. - Industrial: -40C to +85C - Extended: -40C to +105C - Automotive, A1: -40C to +85C - Automotive, A2: -40C to +105C Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A2 09/13/2020