X-On Electronics has gained recognition as a prominent supplier of IS42RM32160E-75BLI DRAM across the USA, India, Europe, Australia, and various other global locations. IS42RM32160E-75BLI DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

IS42RM32160E-75BLI ISSI

IS42RM32160E-75BLI electronic component of ISSI
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Part No.IS42RM32160E-75BLI
Manufacturer: ISSI
Category: DRAM
Description: DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
Datasheet: IS42RM32160E-75BLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
240: USD 9.229 ea
Line Total: USD 2214.96 
Availability - 0
MOQ: 240  Multiples: 240
Pack Size: 240
Availability Price Quantity
0
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 240
Multiples : 240
240 : USD 9.229
480 : USD 9.141
1200 : USD 9.141
2640 : USD 9.097
5040 : USD 8.91

   
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We are delighted to provide the IS42RM32160E-75BLI from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS42RM32160E-75BLI and other electronic components in the DRAM category and beyond.

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IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features JEDEC standard 3.3V, 2.5V, 1.8V power supply All inputs and outputs referenced to the positive edge of the Auto refresh and self refresh system clock All pins are compatible with LVCMOS interface Data mask function by DQM 8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, Internal 4 banks operation A1 grade) Burst Read Single Write operation Programmable Burst Length and Burst Type Special Function Support - 1, 2, 4, 8 or Full Page for Sequential Burst - PASR(Partial Array Self Refresh) - 4 or 8 for Interleave Burst - Auto TCSR(Temperature Compensated Self Refresh) Programmable CAS Latency : 2, 3 clocks - Programmable Driver Strength Control Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode Automatic precharge, includes CONCURRENT Auto Precharge Mode and controlled Precharge Copyright 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances 1 Rev. B.1 Jan. 2016 www.issi.com - DRAM issi.com IS42/45SM/RM/VM32160E Figure1: 90Ball FBGA Ball Assignment 1 2 3 4 5 6 7 8 9 VDD DQ26 DQ24 DQ23 DQ21 A VSS VDDQ DQ28 VDDQ VSSQ DQ19 B VSSQ DQ22 VSSQ DQ27 DQ20 VDDQ C DQ25 VSSQ DQ29 DQ17 DQ18 VDDQ D DQ30 VDDQ DQ31 NC DQ16 VSSQ E NC VSS DQM3 A2 DQM2 VDD F A3 A4 A5 A10 A0 A1 G A6 A7 A8 NC BA1 A11 H A12 BA0 J CLK CKE /CS /RAS A9 /CAS K DQM1 NC /WE DQM0 NC VDD L VDDQ DQ8 DQ7 VSSQ VSS DQ6 M VSSQ DQ10 DQ5 VDDQ DQ9 DQ1 N VSSQ DQ12 DQ3 VDDQ DQ14 P DQ11 VDDQ VDDQ VSSQ DQ4 VSSQ R DQ13 DQ15 VDD DQ0 DQ2 VSS Top View 2 Rev. B.1 Jan. 2016 www.issi.com - DRAM issi.com

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil
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