X-On Electronics has gained recognition as a prominent supplier of IS42SM32160C-75BL DRAM across the USA, India, Europe, Australia, and various other global locations. IS42SM32160C-75BL DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

IS42SM32160C-75BL ISSI

IS42SM32160C-75BL electronic component of ISSI
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Part No.IS42SM32160C-75BL
Manufacturer: ISSI
Category: DRAM
Description: DRAM Chip Mobile SDRAM 512Mbit 16Mx32 3.3V 90-Pin WBGA
Datasheet: IS42SM32160C-75BL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
240: USD 20.0205 ea
Line Total: USD 4804.92 
Availability - 0
MOQ: 240  Multiples: 240
Pack Size: 240
Availability Price Quantity
0
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 240
Multiples : 240
240 : USD 20.0205

   
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We are delighted to provide the IS42SM32160C-75BL from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS42SM32160C-75BL and other electronic components in the DRAM category and beyond.

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IS42SM32160C IS42RM32160C 16Mx32 NOVEMBER2010 512MbMobile SynchronousDRAM FEATURES: DESCRIPTION: ISSI s IS42SM/RM32160C is a 512Mb Mobile Syn- Fully synchronous all signals referenced to a chronous DRAM configured as a quad 4M x32 DRAM. positive clock edge It achieves high-speed data transfer using a pipeline Internal bank for hiding row access and pre- architecture with a synchronous interface. All inputs and charge outputs signals are registered on the rising edge of the Programmable CAS latency: 2, 3 clock input, CLK. The 512Mb SDRAM is internally con- Programmable Burst Length: 1, 2, 4, 8, and Full figured by stacking two 256Mb, 16Mx16 devices. Each Page of the 4M x32 banks is organized as 8192 rows by 512 Programmable Burst Sequence: columns by 32 bits. Sequential and Interleave Auto Refresh (CBR) KEY TIMINGP ARAMETERS TCSR (Temperature Compensated Self Refresh) PASR (Partial Arrays Self Refresh): 1/16, 1/8, Parameter -7 -75 Unit 1/4, 1/2, and Full CLK Cycle Time Deep Power Down Mode (DPD) CAS Latency = 3 7 7.5 ns Driver Strength Control (DS): 1/4, 1/2, and Full CAS Latency = 2 9.6 9.6 ns CLK Frequency OPTIONS: 143 133 Mhz CAS Latency = 3 Configuration: 16Mx32 CAS Latency = 2 104 104 Mhz Power Supply: Access Time from CLK IS42SMxxx - Vdd /Vddq = 3.3V CAS Latency = 3 5.4 5.4 ns IS42RMxxx - Vdd /Vddq = 2.5V Package: 90 Ball BGA (8x13mm) CAS Latency = 2 7 7 ns Temperature Range: o o Commercial (0 C to +70 C) o o Industrial (-40 C to +85 C) Die revision: C ADDRESS TABLE Parameter 16Mx32 Configuration 4M x 32 x 4 banks Bank Address Pins BA0, BA1 Autoprecharge Pins A10/AP Row Addresses A0 A12 Column Addresses A0 A8 Refresh Count 8K / 64ms Copyright 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. 1 Rev. A 11/09/2010 IS42SM32160C IS42RM32160C FUNCTIONALBLOCK DIA GRAM(16Mx16) CLK DQML CKE DQMH DATA IN CS COMMAND BUFFER RAS DECODER 16 16 CAS & WE CLOCK REFRESH MODE 2 DQ 0-15 GENERATOR CONTROLLER REGISTER 13 VDD/VDDQ SELF DATA OUT REFRESH A10 Vss/VssQ BUFFER CONTROLLER 16 16 A12 A11 A9 A8 REFRESH A7 COUNTER A6 A5 8192 A4 8192 MEMORY CELL A3 8192 ARRAY A2 8192 13 A1 BANK 0 ROW ROW A0 ADDRESS ADDRESS BA0 LATCH BUFFER BA1 13 13 SENSE AMP I/O GATE 512 (x 16) COLUMN BANK CONTROL LOGIC ADDRESS LATCH 9 BURST COUNTER COLUMN DECODER COLUMN ADDRESS BUFFER 9 FUNCTIONALBLOCKDIAGRAM(16Mx32) CS CLK CKE Die 01 Die 02 Command Addresses DQ0 DQ31 2 Integrated Silicon Solution, Inc. Rev. A 11/09/2010 MULTIPLEXER ROW DECODER

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil
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