X-On Electronics has gained recognition as a prominent supplier of IS42VM16160E-75BLI DRAM across the USA, India, Europe, Australia, and various other global locations. IS42VM16160E-75BLI DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

IS42VM16160E-75BLI ISSI

IS42VM16160E-75BLI electronic component of ISSI
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Part No.IS42VM16160E-75BLI
Manufacturer: ISSI
Category: DRAM
Description: DRAM Chip Mobile SDRAM 256Mbit 16Mx16 1.8V 54-Pin TFBGA
Datasheet: IS42VM16160E-75BLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
348: USD 9.9922 ea
Line Total: USD 3477.29 
Availability - 0
MOQ: 348  Multiples: 348
Pack Size: 348
Availability Price Quantity
0
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 348
Multiples : 348
348 : USD 9.9922

   
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We are delighted to provide the IS42VM16160E-75BLI from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS42VM16160E-75BLI and other electronic components in the DRAM category and beyond.

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IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features JEDEC standard 3.3V, 2.5V, 1.8V power supply. All inputs and outputs referenced to the positive edge of the Auto refresh and self refresh. system clock. All pins are compatible with LVCMOS interface. Data mask function by DQM. 8K refresh cycle / 64ms. Internal 4 banks operation. Programmable Burst Length and Burst Type. Burst Read Single Write operation. - 1, 2, 4, 8 or Full Page for Sequential Burst. Special Function Support. - 4 or 8 for Interleave Burst. - PASR(Partial Array Self Refresh) Programmable CAS Latency : 2,3 clocks. - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode Automatic precharge, includes CONCURRENT Auto Precharge Mode and controlled Precharge. Copyright 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances 1 Rev. 0C May 2013 www.issi.com - DRAM issi.com IS42/45SM/RM/VM16160E Figure1: 54Ball FBGA Ball Assignment 1 2 3 4 5 6 7 8 9 A VSS DQ15 VSSQ VDDQ DQ0 VDD B DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 C DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 D DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 E DQ8 NC VSS VDD LDQM DQ7 F UDQM CLK CKE /CAS /RAS /WE G A12 A11 A9 BA0 BA1 /CS H A8 A7 A6 A0 A1 A10 J VSS A5 A4 A3 A2 VDD Top View 2 Rev. 0C May 2013 www.issi.com - DRAM issi.com

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil
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