X-On Electronics has gained recognition as a prominent supplier of IS43LR32160C-6BLI DRAM across the USA, India, Europe, Australia, and various other global locations. IS43LR32160C-6BLI DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

IS43LR32160C-6BLI ISSI

IS43LR32160C-6BLI electronic component of ISSI
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Part No.IS43LR32160C-6BLI
Manufacturer: ISSI
Category: DRAM
Description: DRAM Chip Mobile-DDR SDRAM 512Mbit 16Mx32 1.8V 90-Pin TFBGA
Datasheet: IS43LR32160C-6BLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.526 ea
Line Total: USD 9.53 
Availability - 169
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
169
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 9.526
10 : USD 8.778
25 : USD 8.591
100 : USD 7.678
240 : USD 7.447
480 : USD 7.084
1200 : USD 6.842
2640 : USD 6.611
5040 : USD 6.358

   
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We are delighted to provide the IS43LR32160C-6BLI from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS43LR32160C-6BLI and other electronic components in the DRAM category and beyond.

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IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features JEDEC standard 1.8V power supply. 64ms refresh period (8K cycle) VDD = 1.8V, VDDQ = 1.8V Auto & self refresh Four internal banks for concurrent operation Concurrent Auto Precharge MRS cycle with address key programs Maximum clock frequency up to 200MHZ - CAS latency 2, 3 (clock) Maximum data rate up to 400Mbps/pin - Burst length (2, 4, 8, 16) Power Saving support - Burst type (sequential & interleave) - PASR (Partial Array Self Refresh) Fully differential clock inputs (CK, /CK) - Auto TCSR (Temperature Compensated Self Refresh) All inputs except data & DM are sampled at the rising - Deep Power Down Mode edge of the system clock - Programmable Driver Strength Control by Full Strength Data I/O transaction on both edges of data strobe or 3/4, 1/2, 1/4, 1/8 of Full Strength Bidirectional data strobe per byte of data (DQS) Status Register Read (SRR) DM for write masking only LVCMOS compatible inputs/outputs Edge aligned data & data strobe output Packages: Center aligned data & data strobe input - 90-Ball BGA -152-Ball PoP BGA Copyright 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances 1 Rev. B Aug. 2013 www.issi.com - dram issi.com IS43/46LR32160C Figure 1: 90Ball FBGA Ball Assignment 1 2 3 4 5 6 7 8 9 A VDDQ VSS DQ31 DQ16 VDD VSSQ B VDDQ DQ29 DQ17 DQ18 VSSQ DQ30 C VSSQ DQ27 DQ19 DQ20 VDDQ DQ28 D DQ21 VDDQ DQ25 DQ22 VSSQ DQ26 E DQ23 VSSQ DQS3 DQS2 VDDQ DQ24 F NC VDD DM3 DM2 VSS NC G /WE CKE CLK /CAS /RAS /CLK H /CS A9 A11 BA0 BA1 A12 J A10 A6 A7 A0 A1 A8 K A2 A4 DM1 DM0 A3 A5 L DQ7 VSSQ DQS1 DQS0 VDDQ DQ8 M VDDQ DQ9 DQ5 DQ6 VSSQ DQ10 N VSSQ DQ11 DQ3 DQ4 VDDQ DQ12 P DQ1 VDDQ DQ13 DQ2 VSSQ DQ14 R VDDQ VSS DQ15 DQ0 VDD VSSQ Top View 2 Rev. B Aug. 2013 www.issi.com - dram issi.com

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil
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