IS43/46TR16128D, IS43/46TR16128DL, IS43/46TR82560D, IS43/46TR82560DL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2020 FEATURES Standard Voltage: VDD and VDDQ = 1.5V 0.075V Asynchronous RESET pin Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V TDQS (Termination Data Strobe) supported (x8 only) High speed data transfer rates with system OCD (Off-Chip Driver Impedance Adjustment) frequency up to 1066 MHz Dynamic ODT (On-Die Termination) 8 internal banks for concurrent operation Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) 8n-Bit pre-fetch architecture Write Leveling Programmable CAS Latency Up to 200 MHz in DLL off mode Programmable Additive Latency: 0, CL-1,CL-2 Operating temperature: Programmable CAS WRITE latency (CWL) based Commercial (TC = 0C to +95C) on tCK Industrial (T = -40C to +95C) C Programmable Burst Length: 4 and 8 Automotive, A1 (TC = -40C to +95C) Programmable Burst Sequence: Sequential or Automotive, A2 (T = -40C to +105C) C Interleave Automotive, A25 (TC = -40C to +115C) BL switch on the fly Automotive, A3 (T = -40C to +125C) C Auto Self Refresh(ASR) ADDRESS TABLE Self Refresh Temperature (SRT) Parameter 256Mx8 128Mx16 Refresh Interval: Row Addressing A0-A14 A0-A13 7.8 s (8192 cycles/64 ms) Tc= -40C to 85C 3.9 s (8192 cycles/32 ms) Tc= 85C to 105C Column Addressing A0-A9 A0-A9 1.95 s (8192 cycles/16 ms) Tc= 105C to 115C Bank Addressing BA0-2 BA0-2 0.97 s (8192 cycles/8 ms) Tc= 115C to 125C Page size 1KB 2KB Partial Array Self Refresh Auto Precharge A10/AP A10/AP Addressing BL switch on the fly A12/BC A12/BC OPTIONS Configuration: 256Mx8, 128Mx16 Package: 96-ball BGA (9mm x 13mm) for x16 78-ball BGA (8mm x 10.5mm) for x8 SPEED BIN Speed Option 125K 107M 093N Units JEDEC Speed Grade DDR3-1600K DDR3-1866M DDR3-2133N CL-nRCD-nRP 11-11-11 13-13-13 14-14-14 tCK tRCD,tRP(min) 13.75 13.91 13.09 ns Note: Faster speed options are backward compatible to slower speed options. Copyright 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B2 11/16/2020 IS43/46TR16128D, IS43/46TR16128DL, IS43/46TR82560D, IS43/46TR82560DL 1. DDR3 PACKAGE BALLOUT 1.1 DDR3 SDRAM package ballout 78-ball BGA x8 1 2 3 4 5 6 7 8 9 A VSS VDD NC NU/TDQS VSS VDD B VSS VSSQ DQ0 DM/TDQS VSSQ VDDQ C VDDQ DQ2 DQS DQ1 DQ3 VSSQ D VSSQ DQ6 DQS VDD VSS VSSQ E VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ 1 F NC VSS RAS CK VSS NC G ODT VDD CAS CK VDD CKE H NC CS WE A10/AP ZQ NC J VSS BA0 BA2 NC(A15) VREFCA VSS K VDD A3 A0 A12/BC BA1 VDD L VSS A5 A2 A1 A4 VSS M VDD A7 A9 A11 A6 VDD N VSS RESET A13 A14 A8 VSS Note: NC balls have no internal connection. NC(A15) is an NC pin and reserved for higher densities. Integrated Silicon Solution, Inc. www.issi.com 2 Rev. B2 11/16/2020