IS43/46TR16512A, IS43/46TR16512AL 512Mx16 8Gb DDR3 SDRAM FEBRUARY 2018 FEATURES Standard Voltage: VDD and VDDQ = 1.5V 0.075V Refresh Interval: Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V 7.8 us (8192 cycles/64 ms) Tc= -40C to 85C High speed data transfer rates with system 3.9 us (8192 cycles/32 ms) Tc= 85C to 105C frequency up to 933 MHz Partial Array Self Refresh 8 internal banks for concurrent operation Asynchronous RESET pin 8n-Bit pre-fetch architecture OCD (Off-Chip Driver Impedance Adjustment) Programmable CAS Latency Dynamic ODT (On-Die Termination) Programmable Additive Latency: 0, CL-1,CL-2 Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) Programmable CAS WRITE latency (CWL) based Write Leveling on tCK Up to 200 MHz in DLL off mode Programmable Burst Length: 4 and 8 Operating temperature: Programmable Burst Sequence: Sequential or Commercial (TC = 0C to +95C) Interleave Industrial (TC = -40C to +95C) BL switch on the fly Automotive, A1 (TC = -40C to +95C) Auto Self Refresh(ASR) Automotive, A2 (TC = -40C to +105C) Self Refresh Temperature(SRT) Parameter 512Mx16 OPTIONS Row Addressing A0-A14 Configuration: Column Addressing A0-A9 512Mx16(dual die) Bank Addressing BA0-2 Package: Ranks 2 96-ball BGA (10mm x 14mm) Page size 2KB Auto Precharge A10/AP Addressing BL switch on the fly A12/BC ADDRESS TABLE SPEED BIN Speed Option 15H 125K 107M Units JEDEC Speed Grade DDR3-1333H DDR3-1600K DDR3-1866M CL-nRCD-nRP 9-9-9 11-11-11 13-13-13 tCK tRCD,tRP(min) 13.5 13.75 13.91 ns Note:Faster speed options are backward compatible to slower speed options. Copyright 2018 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. E 02/07/2018 IS43/46TR16512A, IS43/46TR16512AL 1.2 DDR3 SDRAM package ballout 96-ball BGA x16 (Two Ranks) 1 2 3 4 5 6 7 8 9 A VDDQ DQU5 DQU7 DQU4 VDDQ VSS B VSSQ VDD VSS DQSU DQU6 VSSQ C VDDQ DQU3 DQU1 DQSU DQU2 VDDQ D VSSQ VDDQ DMU DQU0 VSSQ VDD E VSS VSSQ DQL0 DML VSSQ VDDQ F VDDQ DQL2 DQSL DQL1 DQL3 VSSQ G VSSQ DQL6 DQSL VDD VSS VSSQ H VREFDQ VDDQ DQL4 DQL7 DQL5 VDDQ J ODT1 VSS RAS CK VSS CKE1 K ODT0 VDD CAS CK VDD CKE0 L CS1 CS0 WE A10/AP ZQ0 ZQ1 M VSS BA0 BA2 NC VREFCA VSS N VDD A3 A0 A12/BC BA1 VDD P VSS A5 A2 A1 A4 VSS R VDD A7 A9 A11 A6 VDD T VSS RESET A13 A14 A8 VSS Notes: 1. NC balls have no internal connection. Integrated Silicon Solution, Inc. www.issi.com 2 Rev. E 02/07/2018