X-On Electronics has gained recognition as a prominent supplier of IS43TR16K01S2A-125KBL DRAM across the USA, India, Europe, Australia, and various other global locations. IS43TR16K01S2A-125KBL DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

IS43TR16K01S2A-125KBL ISSI

IS43TR16K01S2A-125KBL electronic component of ISSI
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Part No.IS43TR16K01S2A-125KBL
Manufacturer: ISSI
Category: DRAM
Description: DRAM 16G, 1.35V, DDR3L, 1Gx16,1600MT/s @ 11-11-11, 96 ball BGA (10mm x 14mm) RoHS
Datasheet: IS43TR16K01S2A-125KBL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
136: USD 36.179 ea
Line Total: USD 4920.34 
Availability - 0
MOQ: 136  Multiples: 136
Pack Size: 136
Availability Price Quantity
0
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 136
Multiples : 136
136 : USD 36.179
250 : USD 36.179
500 : USD 34.782

   
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We are delighted to provide the IS43TR16K01S2A-125KBL from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS43TR16K01S2A-125KBL and other electronic components in the DRAM category and beyond.

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IS43/46TR16K01S2A, IS43/46TR16K01S2AL 1Gx16, 16Gb DDR3 SDRAM AUGUST 2020 FEATURES Standard Voltage: V and V = 1.5V 0.075V DD DDQ Low Voltage (L): V and V = 1.35V + 0.1V, -0.067V Refresh Interval: DD DDQ -Backward compatible to 1.5V 7.8 us (8192 cycles/64 ms) Tc= -40C to 85C High speed data transfer rates with system 3.9 us (8192 cycles/32 ms) Tc= 85C to 105C frequency up to 800 MHz Partial Array Self Refresh 8 internal banks for concurrent operation Asynchronous RESET pin 8n-Bit pre-fetch architecture OCD (Off-Chip Driver Impedance Adjustment) Programmable CAS Latency Dynamic ODT (On-Die Termination) Programmable Additive Latency: 0, CL-1,CL-2 Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) Programmable CAS WRITE latency (CWL) based Write Leveling on tCK Up to 200 MHz in DLL off mode Programmable Burst Length: 4 and 8 Operating temperature: Programmable Burst Sequence: Sequential or Commercial (T = 0C to +95C) C Interleave Industrial (TC = -40C to +95C) BL switch on the fly Automotive, A1 (T = -40C to +95C) C Auto Self Refresh(ASR) Automotive, A2 (TC = -40C to +105C) Self Refresh Temperature(SRT) Parameter 1Gx16 OPTIONS Row Addressing A0-A15 Configuration: Column Addressing A0-A9 1Gx16(dual die) Bank Addressing BA0-2 Package: Ranks 2 96-ball BGA (10mm x 14mm) Page size 2KB Auto Precharge A10/AP Addressing BL switch on the fly A12/BC ADDRESS TABLE SPEED BIN Speed Option 125K Units JEDEC Speed Grade DDR3-1600K CL-nRCD-nRP 11-11-11 tCK tRCD,tRP(min) 13.75 ns Note: Faster speed options are backward compatible to slower speed options. Copyright 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B 08/25/2020 IS43/46TR16K01S2A, IS43/46TR16K01S2AL 1.2 DDR3 SDRAM package ballout 96-ball BGA x16 (Two Ranks) 1 2 3 4 5 6 7 8 9 A VDDQ DQU5 DQU7 DQU4 VDDQ VSS B VSSQ VDD VSS DQSU DQU6 VSSQ C VDDQ DQU3 DQU1 DQSU DQU2 VDDQ D VSSQ VDDQ DMU DQU0 VSSQ VDD E VSS VSSQ DQL0 DML VSSQ VDDQ F VDDQ DQL2 DQSL DQL1 DQL3 VSSQ G VSSQ DQL6 DQSL VDD VSS VSSQ H VREFDQ VDDQ DQL4 DQL7 DQL5 VDDQ J ODT1 VSS RAS CK VSS CKE1 K ODT0 VDD CAS CK VDD CKE0 L CS1 CS0 WE A10/AP ZQ0 ZQ1 M VSS BA0 BA2 A15 VREFCA VSS N VDD A3 A0 A12/BC BA1 VDD P VSS A5 A2 A1 A4 VSS R VDD A7 A9 A11 A6 VDD T VSS RESET A13 A14 A8 VSS Integrated Silicon Solution, Inc. www.issi.com 2 Rev. B 08/25/2020

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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